Perry C. Grant

TL;DR: In this paper, optically pumped GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, achieving a maximum Sn composition of 17.5% exceeding the generally acknowledged Sn incorporation limits found with similar deposition chemistries.

TL;DR: The GeSn detector as discussed by the authors offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility, which can be used for high-quality IR photodeter.

TL;DR: It was discovered that Sn incorporation into Ge lattice sites is limited by high compressive strain rather than historically acknowledged chemical reaction dynamics, which was confirmed by Gibbs free energy calculation.

TL;DR: In this article, Si-based GeSn mid-infrared photodetectors have been used to obtain a measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors.