H
Huong Tran
Researcher at University of Arkansas
Publications - 46
Citations - 1075
Huong Tran is an academic researcher from University of Arkansas. The author has contributed to research in topics: Responsivity & Photodetector. The author has an hindex of 12, co-authored 43 publications receiving 659 citations. Previous affiliations of Huong Tran include Pinnacle Financial Partners.
Papers
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Journal ArticleDOI
Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor
Aboozar Mosleh,Murtadha Alher,Larry Cousar,Husam H. Abu-Safe,Wei Dou,Perry C. Grant,Sattar Al-Kabi,Seyed Amir Ghetmiri,Bader Alharthi,Huong Tran,Wei Du,Mourad Benamara,Baohua Li,Mansour Mortazavi,Shui-Qing Yu,Hameed A. Naseem +15 more
Journal ArticleDOI
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou,Yuanhao Miao,Solomon Ojo,Huong Tran,Grey Abernathy,Joshua M. Grant,Sylvester Amoah,Gregory J. Salamo,Wei Du,Jifeng Liu,Joe Margetis,John Tolle,Yong-Hang Zhang,Greg Sun,Richard A. Soref,Baohua Li,Shui-Qing Yu +16 more
TL;DR: In this article, a GeSn/SiGeSn heterostructure diode was grown on a Si substrate in a ridge waveguide laser device and tested under pulsed conditions.
Journal ArticleDOI
Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si
Yiyin Zhou,Yiyin Zhou,Wei Dou,Wei Du,Solomon Ojo,Huong Tran,Huong Tran,Seyed Amir Ghetmiri,Jifeng Liu,Greg Sun,Richard A. Soref,Joe Margetis,John Tolle,Baohua Li,Zhong Chen,Mansour Mortazavi,Shui-Qing Yu +16 more
TL;DR: In this article, an optically pumped GeSn laser based on both ridge and planar waveguide structures was demonstrated for near room temperature operation at 270 K with edge-emitting devices.
Journal ArticleDOI
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.
Thach Pham,Wei Du,Huong Tran,Joe Margetis,John Tolle,Greg Sun,Richard A. Soref,Hameed A. Naseem,Baohua Li,Shui-Qing Yu +9 more
TL;DR: The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.
Journal ArticleDOI
Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
Huong Tran,Wei Du,Seyed Amir Ghetmiri,Aboozar Mosleh,Greg Sun,Richard A. Soref,Joe Margetis,John Tolle,Baohua Li,Hameed A. Naseem,Shui-Qing Yu +10 more
TL;DR: In this paper, the absorption coefficient and refractive index of Ge1−xSnx alloys were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic ellipsometry at room temperature.