Joe Margetis

TL;DR: In this article, optically pumped GeSn edge-emitting lasers were grown on Si substrates and the whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process.

TL;DR: In this paper, a temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line width was conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%.

TL;DR: In this paper, optically pumped GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, achieving a maximum Sn composition of 17.5% exceeding the generally acknowledged Sn incorporation limits found with similar deposition chemistries.

TL;DR: In this article, a GeSn/SiGeSn heterostructure diode was grown on a Si substrate in a ridge waveguide laser device and tested under pulsed conditions.

TL;DR: In this article, an optically pumped GeSn laser based on both ridge and planar waveguide structures was demonstrated for near room temperature operation at 270 K with edge-emitting devices.