P
Peter Fejes
Researcher at Freescale Semiconductor
Publications - 68
Citations - 2637
Peter Fejes is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 24, co-authored 68 publications receiving 2547 citations. Previous affiliations of Peter Fejes include Centre national de la recherche scientifique & Motorola.
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Journal ArticleDOI
Superlattices of Iron Nanocubes Synthesized from Fe[N(SiMe3)2]2
TL;DR: The reaction of the metal-organic precursor Fe[N(SiMe3)2]2 with H2 in the presence of a long-chain acid and along-chain amine in various proportions produces monodisperse zerovalent iron nanoparticles that display magnetic properties that match those of bulk iron.
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Unprecedented crystalline super-lattices of monodisperse cobalt nanorods.
Frédéric Dumestre,Frédéric Dumestre,Bruno Chaudret,Catherine Amiens,Marc Respaud,Peter Fejes,Philippe Renaud,Peter Zurcher +7 more
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Multimillimetre-large superlattices of air-stable iron–cobalt nanoparticles
Céline Desvaux,Catherine Amiens,Peter Fejes,Philippe Renaud,Marc Respaud,Pierre Lecante,Etienne Snoeck,Bruno Chaudret +7 more
TL;DR: This work reports the first direct preparation in solution of multimillimetre-sized three-dimensional compact superlattices of nanoparticles, comprising 15-nm monodisperse FeCo particles that adopt an unusual short-range atomic order that transforms into body-centred-cubic on annealing at 500 ∘C.
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Crystallization in hafnia- and zirconia-based systems
Sergey V. Ushakov,A. Navrotsky,Y. Yang,Susanne Stemmer,Kaupo Kukli,Mikko Ritala,Markku Leskelä,Peter Fejes,Alexander A. Demkov,C. Wang,Bich-Yen Nguyen,D. Triyoso,Philip J. Tobin +12 more
TL;DR: In this article, thermal analysis, X-ray diffraction and electron microscopy were used to study the crystallization of hafnia and zirconia and their alloys with silica and lanthana.
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Two-dimensional growth of high-quality strontium titanate thin films on Si
H. Li,X. Hu,Yi Wei,Zhiyi Jimmy Yu,Xiaodong Zhang,Ravindranath Droopad,Alexander A. Demkov,John L. Edwards,K. Moore,William J. Ooms,J. Kulik,Peter Fejes +11 more
TL;DR: In this article, a step growth method was proposed to suppress the oxidation of the substrate surface and thereby achieve oxide films with a high degree of crystallinity, and the epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved.