K. Moore

TL;DR: In this paper, a wide variety of SiC devices are compared to that of similar Si and GaAs devices and to theoretically expected results, and the performance of these devices is compared to the expected results.

TL;DR: In this article, a step growth method was proposed to suppress the oxidation of the substrate surface and thereby achieve oxide films with a high degree of crystallinity, and the epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved.

TL;DR: In this article, the formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.

Abstract: Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

TL;DR: In this paper, the perovskite oxide surface is reconstructed using half-order reconstructions of the oxide surface and used for real-time stoichiometry monitoring and control during growth while wafers are rotating.