There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

A Three Dimensional Structure (3DS) Memory (100) allows for physical separation of the memory circuits (103) and the control logic circuit (101) onto different layers (103) such that each layer may be separately optimized. One control logic circuit (101) suffices for several memory circuits (103), reducing cost. Fabrication of 3DS memory (100) involves thinning of the memory circuit (103) to less than 50 microns in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections (105) are used. The 3DS memory (100) manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Three dimensional structure memory

Performance of deep-submicrometer very large scale integrated (VLSI) circuits is being increasingly dominated by the interconnects due to decreasing wire pitch and increasing die size. Additionally, heterogeneous integration of different technologies in one single chip is becoming increasingly desirable, for which planar (two-dimensional) ICs may not be suitable. This paper analyzes the limitations of the existing interconnect technologies and design methodologies and presents a novel three-dimensional (3-D) chip design strategy that exploits the vertical dimension to alleviate the interconnect related problems and to facilitate heterogeneous integration of technologies to realize a system-on-a-chip (SoC) design. A comprehensive analytical treatment of these 3-D ICs has been presented and it has been shown that by simply dividing a planar chip into separate blocks, each occurring a separate physical level interconnected by short and vertical interlayer interconnects (VILICs), significant improvement in performance and reduction in wire-limited chip area can be achieved, without the aid of any other circuit or design innovations. A scheme to optimize the interconnect distribution among different interconnect tiers is presented and the effect of transferring the repeaters to upper Si layers has been quantified in this analysis for a two-layer 3-D chip. Furthermore, one of the major concerns in 3-D ICs arising due to power dissipation problems has been analyzed and an analytical model has been presented to estimate the temperatures of the different active layers. It is demonstrated that advancement in heat sinking technology will be necessary in order to extract maximum performance from these chips. Implications of 3-D device architecture on several design issues have also been discussed with special attention to SoC design strategies. Finally some of the promising technologies for manufacturing 3-D ICs have been outlined.

/pdf/3-d-ics-a-novel-chip-design-for-improving-deep-submicrometer-6k9by1rs19.pdf

3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

3D IC is just one of a host of 3D integration schemes that exploit the z-direction Philip Garrou, Christopher Bower, Peter Ramm: Handbook of 3D Integration. Peter Ramm, Fraunhofer EMFT, defines heterogenous 3D integration as 3D for 3D Integration and Interposer Technologies”, Handbook of 3D Integration, Vol. Desktop 3D printing giant MakerBot has published a handbook designed to to support the integration of 3D printing in the classroom though challenges.

/pdf/handbook-of-3d-integration-35xoffw4ur.pdf

Handbook of 3D Integration

Following your need to always fulfil the inspiration to obtain everybody is now simple. Connecting to the internet is one of the short cuts to do. There are so many sources that offer and connect us to other world condition. As one of the products to see in internet, this website becomes a very available place to look for countless handbook of 3d integration technology and applications of 3d integrated circuits sources. Yeah, sources about the books from countries in the world are provided.

Handbook of 3D integration : technology and applications of 3D integrated circuits

A method of making a three dimensionally integrated circuit by connecting first and second substrates (1;7) provided with devices in at least one layer in at least one surface in each of said substrates An auxiliary substrate is connected to the one surface of one of said substrates which is then reduced in thickness from its opposite surface The auxiliary layer with the devices thereon is then separated into individual chips which after having been found to be functioning are aligned and mounted in a side-by-side arrangement on said one surface of said first substrate Electrical connection are formed between the devices of the mounted chips and the devices in the first substrate

Method of making a three-dimensional integrated circuit

3D integration is a rapidly growing topic in the semiconductor industry that encompasses different types of technologies. The paper addresses one of the most promising technologies which uses through silicon vias (TSV) for interconnecting stacked devices on wafer-level to perform high density interconnects with a good electrical performance at the smallest form factor for 3D architectures. Fraunhofer IZM developed a post frontend 3D integration process, the so- called ICV-SLID technology based on metal bonding using solid-liquid-interdiffusion (SLID) soldering. The SLID metal system provides the mechanical and the electrical connection, both in one single step. The ICV-SLID fabrication process is well suited for the cost-effective production of both, high- performance applications (e.g. 3D microprocessor) and highly miniaturized multi-functional systems. The latter preferably in combination with wafer-level die stacking, as e.g. Thin Chip Integration (TCI) or SnAg-microbump technologies. The fabrication of distributed wireless sensor systems (e. g. e-CUBESreg) is a typical example for the need of such mixed approaches.

Peter Ramm

Papers

Handbook of 3D Integration

Handbook of 3D integration : technology and applications of 3D integrated circuits

Method of making a three-dimensional integrated circuit

Through silicon via technology — processes and reliability for wafer-level 3D system integration

Three dimensional metallization for vertically integrated circuits