G
G. Ruhl
Researcher at Fraunhofer Society
Publications - 3
Citations - 232
G. Ruhl is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Dielectric & Deposition (phase transition). The author has an hindex of 3, co-authored 3 publications receiving 224 citations.
Papers
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Journal ArticleDOI
Low dielectric constant materials for interlayer dielectric
TL;DR: In this paper, the authors survey currently used low dielectric constant materials and future trends for micro-electronic applications and present a survey of low and high permittivity replacements.
Journal ArticleDOI
Three dimensional metallization for vertically integrated circuits
D. Bollmann,R. Braun,R. Buchner,U. Cao-Minh,Manfred Engelhardt,G. Errmann,T. Grassl,K. Hieber,H. Hübner,G. Kawala,M.B. Kleiner,Armin Klumpp,S.A. Kuhn,Christof Landesberger,H. Lezec,W. Muth,Werner Pamler,R. Popp,E. Renner,G. Ruhl,A. Sanger,U. Scheler,C. Schmidt,Siegfried Dr. Rer. Nat. Schwarzl,Josef Weber,Werner Weber,Peter Ramm +26 more
TL;DR: In this article, the authors realized a three dimensional metallization for vertically integrated circuits (VIC) using a newly developed technology that allows stacking and vertical interchip wiring of completely processed and electrically tested wafers using available microelectronic processes.
Journal ArticleDOI
Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology
TL;DR: In this article, chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical integration of chips technology.