Q
Qian Wu
Researcher at Sun Yat-sen University
Publications - 14
Citations - 457
Qian Wu is an academic researcher from Sun Yat-sen University. The author has contributed to research in topics: Thin-film transistor & Electron mobility. The author has an hindex of 6, co-authored 14 publications receiving 261 citations.
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Journal ArticleDOI
Correction: An intrinsically stretchable humidity sensor based on anti-drying, self-healing and transparent organohydrogels
Jin Wu,Zixuan Wu,Huihua Xu,Qian Wu,Chuan Liu,Bo-Ru Yang,Xuchun Gui,Xi Xie,Kai Tao,Yi Shen,Jianmin Miao,Leslie K. Norford +11 more
TL;DR: Wu et al. as discussed by the authors proposed an intrinsically stretchable humidity sensor based on anti-drying, self-healing and transparent organohydrogels for indoor humidity measurement.
Journal ArticleDOI
Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors
Tengzhou Yang,Qian Wu,Fuhua Dai,Kairong Huang,Huihua Xu,Chenning Liu,Changdong Chen,Sujuan Hu,Xiaoci Liang,Xuying Liu,Yong-Young Noh,Chuan Liu +11 more
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Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors.
Changdong Chen,Bo Ru Yang,Gongtan Li,Hang Zhou,Bolong Huang,Qian Wu,Runze Zhan,Yong-Young Noh,Takeo Minari,Shengdong Zhang,Shaozhi Deng,Henning Sirringhaus,Chuan Liu +12 more
TL;DR: Large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations and the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation are reported.
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Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices
TL;DR: In this paper, the authors reported solution-processed tin-gallium-oxide (SnGaO) thin-film transistors for In-and Zn-free electronics.
Journal ArticleDOI
Precise Patterning of Large-Scale TFT Arrays Based on Solution-Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches
TL;DR: In this article, the additive and subtractive patterning strategies were used to precisely fabricate wafer-scale thin film transistor arrays (1600 devices), which are based on high-quality solution-processed indium zinc oxide (IZO) and indium gallium zincoxide (IGZO).