Q
Qiming He
Researcher at Chinese Academy of Sciences
Publications - 36
Citations - 1069
Qiming He is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Schottky diode & Schottky barrier. The author has an hindex of 11, co-authored 19 publications receiving 415 citations. Previous affiliations of Qiming He include Beihang University & Xiangtan University.
Papers
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Journal ArticleDOI
An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
TL;DR: Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD).
Journal ArticleDOI
Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
Yuan Qin,Li-Heng Li,Xiaolong Zhao,Gary S. Tompa,Hang Dong,Guangzhong Jian,Qiming He,Pengju Tan,Xiaohu Hou,Zhongfang Zhang,Shunjie Yu,Haiding Sun,Guangwei Xu,Xiangshui Miao,Kan-Hao Xue,Shibing Long,Shibing Long,Ming Liu,Ming Liu +18 more
TL;DR: In this paper, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in solar blind imaging, deep space exploration, confidential space communica...
Journal ArticleDOI
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Qiming He,Qiming He,Wenxiang Mu,Hang Dong,Hang Dong,Shibing Long,Shibing Long,Zhitai Jia,Zhitai Jia,Hangbing Lv,Hangbing Lv,Qi Liu,Qi Liu,Minghua Tang,Xutang Tao,Ming Liu,Ming Liu +16 more
TL;DR: In this paper, the edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope.
Journal ArticleDOI
Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
Weibing Hao,Qiming He,Kai Zhou,Guangwei Xu,Wenhao Xiong,Xuanze Zhou,Guangzhong Jian,Chen Chen,Xiaolong Zhao,Shibing Long +9 more
TL;DR: In this article, a high performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing is presented, which leads to a record high power figure of merit of 0.65 GW/cm2.
Journal ArticleDOI
Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging
Yuan Qin,Shibing Long,Shibing Long,Qiming He,Hang Dong,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Ying-Jie Lu,Chongxin Shan,Jianlu Wang,Weida Hu,Hangbing Lv,Hangbing Lv,Qi Liu,Qi Liu,Ming Liu,Ming Liu +19 more