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Hang Dong

Researcher at Chinese Academy of Sciences

Publications -  20
Citations -  737

Hang Dong is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Layer (electronics) & Ohmic contact. The author has an hindex of 11, co-authored 20 publications receiving 377 citations. Previous affiliations of Hang Dong include Center for Advanced Materials.

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Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

TL;DR: In this paper, the edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope.
Journal ArticleDOI

High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga 2 O 3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes

TL;DR: In this article, a high performance solar-blind photodetector (SBPD) with asymmetric Schottky electrodes was presented, which was heteroepitaxially grown on sapphire by metal-organic chemical vapor deposition (MOCVD).