R
R.P.S. Chakradhar
Researcher at National Aerospace Laboratories
Publications - 168
Citations - 5159
R.P.S. Chakradhar is an academic researcher from National Aerospace Laboratories. The author has contributed to research in topics: Electron paramagnetic resonance & Photoluminescence. The author has an hindex of 36, co-authored 166 publications receiving 4423 citations. Previous affiliations of R.P.S. Chakradhar include Council of Scientific and Industrial Research & Indian Institute of Science.
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Characterization, EPR and photoluminescence studies of LiAl5O8:Cr phosphors
TL;DR: In this article, a red emitting Cr3+ doped LiAl5O8 powder phosphor was prepared by combustion route using corresponding metal nitrates and urea in a single step, which was characterized by X-ray diffraction and surface area measurements were carried out by Brunauer-Emmet-Teller adsorption isotherms.
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Green luminescence and EPR studies on Mn-activated yttrium aluminum garnet phosphor
TL;DR: In this article, the spin concentration (N) and paramagnetic susceptibility (χ) of Y3Al5O12 and Mn2+ activated YAG have been evaluated and discussed.
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Enhanced microwave absorption properties of PMMA modified MnFe2O4–polyaniline nanocomposites
R.V. Lakshmi,Parthasarathi Bera,R.P.S. Chakradhar,Balamati Choudhury,Shital Patangrao Pawar,Suryasarathi Bose,Raveendranath U. Nair,Harish C. Barshilia +7 more
TL;DR: It is observed that composites containing the PMMA modified ferrite show enhanced total shielding effectiveness (SET) compared to those containing the unmodified ferrite in the X band frequency range (8-12 GHz).
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Electron paramagnetic resonance and photoluminescence properties of α -Al 2 O 3 :Cr 3+ phosphors
TL;DR: In this paper, a red emitting Cr3+ activated α-Al2O3 powder was characterized by X-ray diffraction, scanning electron microscopy, and Fourier transform infrared techniques.
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Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.
TL;DR: The electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications and the current-voltage and capacitors characteristics were studied.