R
Raymond J. E. Hueting
Researcher at MESA+ Institute for Nanotechnology
Publications - 142
Citations - 2333
Raymond J. E. Hueting is an academic researcher from MESA+ Institute for Nanotechnology. The author has contributed to research in topics: Trench & Transistor. The author has an hindex of 23, co-authored 139 publications receiving 2094 citations. Previous affiliations of Raymond J. E. Hueting include University of Udine & Philips.
Papers
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Journal ArticleDOI
The Charge Plasma P-N Diode
TL;DR: In this article, a simulation study on a new rectifier concept is presented, which basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body.
Journal ArticleDOI
Fabrication and Characterization of the Charge-Plasma Diode
B. Rajasekharan,Raymond J. E. Hueting,Cora Salm,Tom van Hemert,R.A.M. Wolters,Jurriaan Schmitz +5 more
TL;DR: In this article, a lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator was proposed, which utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body.
Patent
Cellular trench-gate field-effect transistors
TL;DR: In this article, a cellular trench-gate field-effect transistor (FET) was proposed to reduce the risk of premature breakdown that can occur at high field points in the depletion layer, especially at the perimeter of the cellular array.
Journal ArticleDOI
Electrostatic Doping in Semiconductor Devices
TL;DR: In this paper, the role of metal and semiconductor workfunctions, energy bandgap, and applied electric field and the interplay between them for the induced ED is discussed, and the effect of interface traps on the induced charge is also addressed.
Patent
Trenched schottky rectifiers
TL;DR: In this paper, the Schottky barrier is formed by the inner and perimeter trenches of a trenched rectifier with a drift region and a perimeter trench (18), where dielectric material lines the inner trenches (11, 18).