Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

We show that the Raman scattering technique can give complete structural information for one-dimensional systems, such as carbon nanotubes. Resonant confocal micro-Raman spectroscopy of an (n,m) individual single-wall nanotube makes it possible to assign its chirality uniquely by measuring one radial breathing mode frequency omega(RBM) and using the theory of resonant transitions. A unique chirality assignment can be made for both metallic and semiconducting nanotubes of diameter d(t), using the parameters gamma(0) = 2.9 eV and omega(RBM) = 248/d(t). For example, the strong RBM intensity observed at 156 cm(-1) for 785 nm laser excitation is assigned to the (13,10) metallic chiral nanotube on a Si/SiO2 surface.

Structural (n,m) determination of isolated single wall carbon nanotubes by resonant Raman scattering

This review provides a perspective on the recent developments in the transmission of light through subwavelength apertures in metal films. The main focus is on the phenomenon of extraordinary optical transmission in periodic hole arrays, discovered over a decade ago. It is shown that surface electromagnetic modes play a key role in the emergence of the resonant transmission. These modes are also shown to be at the root of both the enhanced transmission and beaming of light found in single apertures surrounded by periodic corrugations. This review describes both the theoretical and experimental aspects of the subject. For clarity, the physical mechanisms operating in the different structures considered are analyzed within a common theoretical framework. Several applications based on the transmission properties of subwavelength apertures are also addressed.

http://digital.csic.es/bitstream/10261/47904/1/Light%20passing.pdf

Light passing through subwavelength apertures

2.3. Ionic Liquids (ILs) 5374 2.4. Complexation Reactions on Oxidized CNTs 5375 2.5. Halogenation 5376 2.6. Cycloaddition Reactions 5377 2.7. Radical Additions 5379 2.8. Nucleophilic Additions 5381 2.9. Electrophilic Additions 5381 2.10. Electrochemical Modifications 5381 2.11. Plasma-Activation 5381 2.12. Mechanochemical Functionalizations 5382 3. Noncovalent Interactions 5382 3.1. Polynuclear Aromatic Compounds 5382 3.2. Interactions with Other Substances 5384 3.3. Interactions with Biomolecules 5385 4. Endohedral Filling 5386 4.1. Encapsulation of Fullerenes 5386 4.2. Encapsulation of Organic Substances 5387 4.3. Encapsulation of Inorganic Substances 5387 5. Decoration of CNTs with Metal Nanoparticles 5388 5.1. Covalent Linkage 5388 5.2. Direct Formation on Defect Sites 5388 5.3. Electroless Deposition 5388 5.4. Electrodeposition 5389 5.5. Chemical Decoration 5390 5.6. Deposition of Nanoparticles onto CNTs 5391 5.7. π-π Stacking and Electrostatic Interactions 5391 6. Concluding Remarks 5392 7. Acknowledgments 5392 8. References 5392

Current progress on the chemical modification of carbon nanotubes.

Patterning at resolution below the diffraction limit for projection optical lithography has been demonstrated using evanescent near-field optical lithography with broadband illumination (365–600 nm). Linewidths of 50 nm and gratings with 140 nm period have been achieved. Ultrathin photoresist layers in conjunction with conformable photomasks are employed and a reactive ion etching process using SF6 has been developed to transfer the patterns to a depth of more than 100 nm into silicon. Full electromagnetic field simulations of the exposure process show that a high contrast image is present within the resist layer, and that the exposure is dominated by one polarization for the grating structures studied.

Sub-diffraction-limited patterning using evanescent near-field optical lithography

The effect of CF4 gaseous plasma exposure to single-wall carbon nanotubes (CNTs) has been studied. Raman spectroscopy results show that CNTs have gained more disordered sp3 bonds associated with functionalization, as both the flow rates of gas in the plasma and exposure time in the plasma are increased. Scanning electron microscopy images indicate the CNTs have been preserved after CF4 plasma exposure. X-ray photoelectron spectroscopy provides evidence of carbon to fluorine bonds (C–F) on the CNTs samples after CF4 plasma exposure. Semi-ionic and covalent C–F bonds are prevalent on the CNTs after CF4 exposure with the intensity ratio of the semi-ionic to covalent C–F bond decreasing as the flow rate of CF4 and exposure time in the CF4 plasma is increased.

Fluorination of carbon nanotubes in CF4 plasma

This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product.

Silicon Carbide Microelectromechanical Systems for Harsh Environments

We report the experimental determination of the elastic properties of suspended multilayer WSe2, a promising two-dimensional (2D) semiconducting material combined with high optical quality. The suspended WSe2 membranes have been fabricated by mechanical exfoliation of bulk WSe2 and transfer of the exfoliated multilayer WSe2 flakes onto SiO2/Si substrates pre-patterned with hole arrays. Then, indentation experiments have been performed on these membranes with an atomic force microscope. The results show that the 2D elastic modulus of the multilayer WSe2 membranes increases linearly while the prestress decreases linearly as the number of layers increases. The interlayer interaction in WSe2 has been observed to be strong enough to prevent the interlayer sliding during the indentation experiments. The Young's modulus of multilayer WSe2 (167.3 ± 6.7 GPa) is statistically independent of the thickness of the membranes, whose value is about two thirds of other most investigated 2D semiconducting transition metal dichalcogenides, namely, MoS2 and WS2. Moreover, the multilayer WSe2 can endure ∼12.4 GPa stress and ∼7.3% strain without fracture or mechanical degradation. The 2D WSe2 can be an attractive semiconducting material for application in flexible optoelectronic devices and nano-electromechanical systems.

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Elastic properties of suspended multilayer WSe2

A dry etching technique which is capable of producing lowdamage, high-aspect-ratio structures on a nanometric scale in GaAs is described. The reactive ion etching employs a mixture of methane and hydrogen; details of the optimum conditions are given.

Rebecca Cheung

Papers

Sub-diffraction-limited patterning using evanescent near-field optical lithography

Fluorination of carbon nanotubes in CF4 plasma

Silicon Carbide Microelectromechanical Systems for Harsh Environments

Elastic properties of suspended multilayer WSe2

Reactive ion etching of GaAs using a mixture of methane and hydrogen