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Renrong Liang
Researcher at Tsinghua University
Publications - 163
Citations - 2734
Renrong Liang is an academic researcher from Tsinghua University. The author has contributed to research in topics: Gate dielectric & Transistor. The author has an hindex of 20, co-authored 158 publications receiving 1871 citations. Previous affiliations of Renrong Liang include Xidian University & Delft University of Technology.
Papers
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Journal ArticleDOI
Epidermis Microstructure Inspired Graphene Pressure Sensor with Random Distributed Spinosum for High Sensitivity and Large Linearity.
Yu Pang,Kun-Ning Zhang,Zhen Yang,Song Jiang,Zhen-Yi Ju,Yuxing Li,Xue-Feng Wang,Dan-Yang Wang,Muqiang Jian,Yingying Zhang,Renrong Liang,He Tian,Yi Yang,Tian-Ling Ren +13 more
TL;DR: The RDS microstructure provides an alternative strategy to improve the performance of pressure sensors and extend their potential applications in monitoring human activities through the combination of an abrasive paper template and reduced graphene oxide.
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Multilayer Graphene Epidermal Electronic Skin.
Yancong Qiao,Yunfan Wang,He Tian,Mingrui Li,Jinming Jian,Yuhong Wei,Ye Tian,Dan-Yang Wang,Yu Pang,Xiangshun Geng,Xue-Feng Wang,Yunfei Zhao,Huimin Wang,Ning-Qin Deng,Muqiang Jian,Yingying Zhang,Renrong Liang,Yi Yang,Tian-Ling Ren +18 more
TL;DR: A multilayer graphene epidermal electronic skin based on laser scribing graphene, whose patterns are programmable, and a physical model is established to explain the relationship between the crack directions and electrical characteristics are demonstrated.
Journal ArticleDOI
Ferroelastic switching in a layered-perovskite thin film.
Chuanshou Wang,Xiaoxing Ke,Xiaoxing Ke,J. J. Wang,Renrong Liang,Zhenlin Luo,Yu Tian,Di Yi,Qintong Zhang,Jing Wang,Xiufeng Han,Gustaaf Van Tendeloo,Long Qing Chen,Long Qing Chen,Ce-Wen Nan,Ramamoorthy Ramesh,Jinxing Zhang +16 more
TL;DR: Reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, demonstrating a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
Journal ArticleDOI
MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
Xingqiang Liu,Xingqiang Liu,Renrong Liang,Guoyun Gao,Caofeng Pan,Caofeng Pan,Chunsheng Jiang,Qian Xu,Jun Luo,Xuming Zou,Zhenyu Yang,Lei Liao,Zhong Lin Wang +12 more
TL;DR: The fabricated MoS2 NC-FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low-power transistors needed for many exciting long-endurance portable consumer products.
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Application of plasmonic silver island films in thin-film silicon solar cells
TL;DR: In this article, the authors used a common self-assembly technique to fabricate a range of silver island films on transparent substrates and measure their reflectance and transmittance for visible and near infrared light.