R
Rich Gregory
Researcher at Freescale Semiconductor
Publications - 79
Citations - 2096
Rich Gregory is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Dielectric & Amorphous solid. The author has an hindex of 24, co-authored 79 publications receiving 2019 citations. Previous affiliations of Rich Gregory include Motorola.
Papers
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Journal ArticleDOI
Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry
Thomas E. Tiwald,John A. Woollam,Stefan Zollner,Jim Christiansen,Rich Gregory,T. Wetteroth,Syd R. Wilson,Adrian Powell +7 more
TL;DR: In this article, the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates was measured using Fourier transform infrared spectroscopic ellipsometry.
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Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2
Dina H. Triyoso,Ran Liu,D. Roan,M. Ramon,N. V. Edwards,Rich Gregory,D. Werho,J. Kulik,G. Tam,E. Irwin,X.-D. Wang,L.B. La,C. Hobbs,R. Garcia,J. Baker,B. E. White,Philip J. Tobin +16 more
TL;DR: In this paper, material and electrical characterization of ALD hafnium oxide and the correlations between the results were reported. And the results indicated that deposition temperature controlled both the material and the electrical properties.
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Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions
TL;DR: In this article, the effects of ambient anneal and Pt thickness on the interdiffusion of Pt/Ti bilayers deposited on SiO2/Si and on reactively sputtered TiN/Ti/Si substrates have been investigated.
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Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses
TL;DR: In this article, a comparative study of reactively-ion-sputtered (RIS) and low pressure chemical-vapor-deposited (LPCVD) TiN, and sputterdepositing TaN thin films as diffusion barriers for Cu has been done using Auger electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, scanning electron microscopy, and sheet resistance measurements.
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Characterization of sputtered barium strontium titanate and strontium titanate-thin films
B. A. Baumert,L.-H. Chang,A. T. Matsuda,T.-L. Tsai,Clarence J. Tracy,Rich Gregory,Peter Fejes,N. G. Cave,Wei Chen,D. J. Taylor,T. Otsuki,Eiji Fujii,S. Hayashi,K. Suu +13 more
TL;DR: Sputtered Ba1−xSrxTiO3 (BST) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties.