The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.

https://iopscience.iop.org/article/10.1088/0022-3727/31/20/001/pdf

Growth and applications of Group III-nitrides

The extracellular matrix (ECM), and especially the connective tissue with its collagen, links tissues of the body together and plays an important role in the force transmission and tissue structure maintenance especially in tendons, ligaments, bone, and muscle. The ECM turnover is influenced by physical activity, and both collagen synthesis and degrading metalloprotease enzymes increase with mechanical loading. Both transcription and posttranslational modifications, as well as local and systemic release of growth factors, are enhanced following exercise. For tendons, metabolic activity, circulatory responses, and collagen turnover are demonstrated to be more pronounced in humans than hitherto thought. Conversely, inactivity markedly decreases collagen turnover in both tendon and muscle. Chronic loading in the form of physical training leads both to increased collagen turnover as well as, dependent on the type of collagen in question, some degree of net collagen synthesis. These changes will modify the mechanical properties and the viscoelastic characteristics of the tissue, decrease its stress, and likely make it more load resistant. Cross-linking in connective tissue involves an intimate, enzymatical interplay between collagen synthesis and ECM proteoglycan components during growth and maturation and influences the collagen-derived functional properties of the tissue. With aging, glycation contributes to additional cross-linking which modifies tissue stiffness. Physiological signaling pathways from mechanical loading to changes in ECM most likely involve feedback signaling that results in rapid alterations in the mechanical properties of the ECM. In developing skeletal muscle, an important interplay between muscle cells and the ECM is present, and some evidence from adult human muscle suggests common signaling pathways to stimulate contractile and ECM components. Unaccostumed overloading responses suggest an important role of ECM in the adaptation of myofibrillar structures in adult muscle. Development of overuse injury in tendons involve morphological and biochemical changes including altered collagen typing and fibril size, hypervascularization zones, accumulation of nociceptive substances, and impaired collagen degradation activity. Counteracting these phenomena requires adjusted loading rather than absence of loading in the form of immobilization. Full understanding of these physiological processes will provide the physiological basis for understanding of tissue overloading and injury seen in both tendons and muscle with repetitive work and leisure time physical activity.

Role of Extracellular Matrix in Adaptation of Tendon and Skeletal Muscle to Mechanical Loading

During the last few years the developments in the field of III–nitrides have been spectacular. High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers have also been grown by MBE. Considerable work has been done on dislocations, strain, and critical thickness of GaN grown on different substrates. Splitting of valence band by crystal field and by spin-orbit interaction has been calculated and measured. The measured values agree with the calculated values. Effects of strain on the splitting of the valence band and on the optical properties have been studied in detail. Values of band offsets at the heterointerface between several pairs of different nitrides have been determined. Extensive work has been done on the optical and electrical properties. Near band-edge spectra have been measured over a wide range of temperatures. Free and bound exciton peaks have been resolved. Valence band structure has been determined using the PL spectra and compared with the theoretically calcu...

III–nitrides: Growth, characterization, and properties

Intermediate filaments (IFs) constitute a major structural element of animal cells They build two distinct systems, one in the nucleus and one in the cytoplasm In both cases, their major function is assumed to be that of a mechanical stress absorber and an integrating device for the entire cytoskeleton In line with this, recent disease mutations in human IF proteins indicate that the nanomechanical properties of cell-type-specific IFs are central to the pathogenesis of diseases as diverse as muscular dystrophy and premature ageing However, the analysis of these various diseases suggests that IFs also have an important role in cell-type-specific physiological functions

Intermediate filaments: from cell architecture to nanomechanics

p‐ and n‐type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100 °C or higher is required to achieve p‐type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of ∼100%. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O‐implanted GaN displays an ionization level of ∼29 meV but with an activation efficiency of only 3.6% after a 1050 °C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125 °C anneal.

Ca and O ion implantation doping of GaN

W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+‐GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out‐diffusion was observed on the surface of thin (500 A) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+‐GaN for high temperature applications.

Thermal stability of W ohmic contacts to n‐type GaN

Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p‐type and n‐type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p‐gate region to be self‐aligned to the gate contact. A gate turn‐on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a ∼1.7 μm×50 μm JFET with a −6 V threshold voltage, a maximum transconductance of 7 mS/mm at VGS=− 2V and saturation current of 33 mA/mm at VGS=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized n+ implants in the source and drain regions.

Ion‐implanted GaN junction field effect transistor

An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

Apparatus for depositing a coating on a substrate

Ion channeling and cross‐sectional transmission electron microscopy were used to study the extent and nature of Si ion implantation damage in epitaxial GaN layers at liquid nitrogen temperature. Results indicate that displacement damage produced by the implantation undergoes substantial dynamic annealing during implantation. As a result, at moderate implantation doses residual implantation damage consists of a dense network of secondary defects, such as clusters and loops, which are a consequence of incomplete annihilation of implantation‐produced defects. Amorphous layers can be produced, but the doses required are extremely high (≳1016 cm−2) and amorphization appears to ‘‘nucleate’’ at the surface.

/pdf/damage-to-epitaxial-gan-layers-by-silicon-implantation-50evyqrh4x.pdf

Richard A. Stall

Papers

Ca and O ion implantation doping of GaN

Thermal stability of W ohmic contacts to n‐type GaN

Ion‐implanted GaN junction field effect transistor

Apparatus for depositing a coating on a substrate

Damage to epitaxial GaN layers by silicon implantation