R
Richard Lai
Researcher at Northrop Grumman Corporation
Publications - 256
Citations - 5365
Richard Lai is an academic researcher from Northrop Grumman Corporation. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 36, co-authored 255 publications receiving 5095 citations. Previous affiliations of Richard Lai include TRW Inc. & Grumman Aircraft Corporation.
Papers
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Journal ArticleDOI
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
Xiaobing Mei,W. Yoshida,M. Lange,J. Lee,Joe Zhou,Po-Hsin Liu,Kevin M. K. H. Leong,Alex Zamora,Jose G. Padilla,Stephen Sarkozy,Richard Lai,William R. Deal +11 more
TL;DR: In this article, the first terahertz integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process was demonstrated at 1 GHz with 9-dB measured gain at 1.5 GHz.
Proceedings ArticleDOI
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Richard Lai,X.B. Mei,William R. Deal,W. Yoshida,Y.M. Kim,Po-Hsin Liu,J. Lee,J. Uyeda,Vesna Radisic,M. Lange,T. C. Gaier,Lorene Samoska,A. Fung +12 more
TL;DR: In this article, the authors presented the latest advancements of sub 50 nm InGaAs/lnAIAS/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz.
Journal ArticleDOI
THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors
TL;DR: In this article, the authors present a background describing THz monolithic integrated circuits using InP HEMT, which has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz.
Journal ArticleDOI
Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power
Niklas Wadefalk,Anders Mellberg,Iltcho Angelov,Michael E. Barsky,S. Bui,E. Choumas,R.W. Grundbacher,E. L. Kollberg,Richard Lai,Niklas Rorsman,Piotr Starski,Jörgen Stenarson,D.C. Streit,Herbert Zirath +13 more
TL;DR: In this paper, the authors describe a two-stage InP-based amplifier with a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry.
Journal ArticleDOI
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs
William R. Deal,Kevin M. K. H. Leong,Vesna Radisic,Stephen Sarkozy,Ben S. Gorospe,J. Lee,Po-Hsin Liu,W. Yoshida,Joe Zhou,M. Lange,Richard Lai,Xiaobing Mei +11 more
TL;DR: In this paper, a high fMAX InP HEMT transistors in a 5-stage coplanar waveguide integrated circuit were used for low noise amplification at 0.67 GHz.