Journal ArticleDOI
Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs
William R. Deal,Kevin M. K. H. Leong,Vesna Radisic,Stephen Sarkozy,Ben S. Gorospe,J. Lee,Po-Hsin Liu,W. Yoshida,Joe Zhou,M. Lange,Richard Lai,Xiaobing Mei +11 more
TLDR
In this paper, a high fMAX InP HEMT transistors in a 5-stage coplanar waveguide integrated circuit were used for low noise amplification at 0.67 GHz.Abstract:
In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high fMAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.read more
Citations
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Journal ArticleDOI
Optical-field-induced current in dielectrics
Agustin Schiffrin,Tim Paasch-Colberg,Nicholas Karpowicz,Vadym Apalkov,Daniel Gerster,Sascha Muhlbrandt,Michael Korbman,Joachim Reichert,Martin Schultze,Simon Holzner,Johannes V. Barth,Reinhard Kienberger,Ralph Ernstorfer,Vladislav S. Yakovlev,Mark I. Stockman,Ferenc Krausz +15 more
TL;DR: The feasibility of electric signal manipulation in a dielectric is reported, opening the way to extending electronic signal processing and high-speed metrology into the petahertz (1015 hertz) domain.
Journal ArticleDOI
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
Xiaobing Mei,W. Yoshida,M. Lange,J. Lee,Joe Zhou,Po-Hsin Liu,Kevin M. K. H. Leong,Alex Zamora,Jose G. Padilla,Stephen Sarkozy,Richard Lai,William R. Deal +11 more
TL;DR: In this article, the first terahertz integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process was demonstrated at 1 GHz with 9-dB measured gain at 1.5 GHz.
Journal ArticleDOI
Terahertz Band: The Last Piece of RF Spectrum Puzzle for Communication Systems
TL;DR: An up-to-date review paper to analyze key concepts associated with the Terahertz system architecture and presents a comprehensive comparison between the THz wireless communication and its other contenders.
Journal ArticleDOI
InP HBT Technologies for THz Integrated Circuits
TL;DR: The state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies are reviewed and challenges in extending transistor bandwidth and in circuit design at THz frequencies are addressed.
Journal ArticleDOI
Terahertz band communication systems: Challenges, novelties and standardization efforts
Kursat Tekbiyik,Kursat Tekbiyik,Ali Riza Ekti,Ali Riza Ekti,Gunes Karabulut Kurt,Ali Gorcin,Ali Gorcin +6 more
TL;DR: This study concludes that the actual implementation of fully operational Terahertz communication systems obliges to carry out a multi-disciplinary effort including statistical propagation and channel characterizations, adaptive transceiver designs, reconfigurable platforms, advanced signal processing algorithms and techniques along with upper layer protocols equipped with various security and privacy levels.
References
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Proceedings ArticleDOI
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Richard Lai,X.B. Mei,William R. Deal,W. Yoshida,Y.M. Kim,Po-Hsin Liu,J. Lee,J. Uyeda,Vesna Radisic,M. Lange,T. C. Gaier,Lorene Samoska,A. Fung +12 more
TL;DR: In this article, the authors presented the latest advancements of sub 50 nm InGaAs/lnAIAS/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz.
Journal ArticleDOI
A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging
Kevin M. K. H. Leong,William R. Deal,Vesna Radisic,Xiao Bing Mei,J. Uyeda,Lorene Samoska,Andy Fung,T. C. Gaier,Richard Lai +8 more
TL;DR: In this article, a rectangular waveguide to conductor backed-coplanar waveguide electromagnetic transition suitable of operating at sub-millimeter wave frequencies is demonstrated. But this transition is not suitable for direct integration of sub- millimeter wave monolithic integrated circuits.
Proceedings ArticleDOI
Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz
William R. Deal,Xiaobing Mei,Vesna Radisic,W. Yoshida,Po-Hsin Liu,J. Uyeda,Michael E. Barsky,T. C. Gaier,Andy Fung,Richard Lai +9 more
TL;DR: In this article, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time, using advanced InP HEMT transistors.
Proceedings ArticleDOI
A 300 GHz mHEMT amplifier module
Axel Tessmann,Arnulf Leuther,Volker Hurm,Hermann Massler,M. Zink,M. Kuri,M. Riessle,R. Losch,Michael Schlechtweg,Oliver Ambacher +9 more
TL;DR: In this paper, the authors presented the development of an H-band (220- 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz.
Journal ArticleDOI
A Unique 520–590 GHz Biased Subharmonically-Pumped Schottky Mixer
TL;DR: In this paper, the authors report on the design and performance of a broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes.