Proceedings ArticleDOI
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Richard Lai,X.B. Mei,William R. Deal,W. Yoshida,Y.M. Kim,Po-Hsin Liu,J. Lee,J. Uyeda,Vesna Radisic,M. Lange,T. C. Gaier,Lorene Samoska,A. Fung +12 more
- pp 609-611
TLDR
In this article, the authors presented the latest advancements of sub 50 nm InGaAs/lnAIAS/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz.Abstract:
In this paper, we present the latest advancements of sub 50 nm InGaAs/lnAIAs/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.read more
Citations
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Journal ArticleDOI
Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
Journal ArticleDOI
Present and Future of Terahertz Communications
Ho-Jin Song,Tadao Nagatsuma +1 more
TL;DR: The current progress of terahertz-wave technologies related to communications applications are examined and some issues that need to be considered for the future of THz communications are discussed.
Journal ArticleDOI
A role for graphene in silicon-based semiconductor devices
TL;DR: Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap, but it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
Journal ArticleDOI
Graphene Transistors: Status, Prospects, and Problems
TL;DR: The properties of graphene relevant for electronic applications are discussed, its advantages and problems are examined, and the state of the art of graphene transistors are summarized.
Journal ArticleDOI
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
Xiaobing Mei,W. Yoshida,M. Lange,J. Lee,Joe Zhou,Po-Hsin Liu,Kevin M. K. H. Leong,Alex Zamora,Jose G. Padilla,Stephen Sarkozy,Richard Lai,William R. Deal +11 more
TL;DR: In this article, the first terahertz integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process was demonstrated at 1 GHz with 9-dB measured gain at 1.5 GHz.
References
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Proceedings ArticleDOI
Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz f max and 416 GHz f T
Z. Griffith,Erik Lind,Mark J. W. Rodwell,Xiao-Ming Fang,Dmitri Loubychev,Ying Wu,Joel M. Fastenau,Amy W. K. Liu +7 more
TL;DR: In this paper, the InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) fabricated using a simple mesa structure were reported to have a maximum fmax = 755 GHz with a 416 GHz /fT. This is the highest fmax reported for a mesa HBT.
Proceedings ArticleDOI
InP HEMT amplifier development for G-band (140-220 GHz) applications
Richard Lai,M. Barsky,Ronald W. Grundbacher,Po-Hsin Liu,T.P. Chin,M. Nishimoto,R. Elmajarian,R. Rodriguez,Liem T. Tran,A. Gutierrez,Aaron K. Oki,Dwight C. Streit +11 more
TL;DR: In this article, a unique InP HEMT MMIC process was developed for the demonstration of the first ever G-band (140-220 GHz) amplifiers, which achieved a high maximum gain of greater than 8 dB at 200 GHz and 15 dB at 215 GHz.
Proceedings ArticleDOI
On-Wafer Vector Network Analyzer Measurements in the 220-325 GHz Frequency Band
TL;DR: In this paper, a two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band is presented, which utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C analyzer.
Proceedings ArticleDOI
Metamorphic H-Band Low-Noise Amplifier MMICs
Axel Tessmann,Arnulf Leuther,Hermann Massler,Wolfgang Bronner,Michael Schlechtweg,G. Weimann +5 more
TL;DR: In this article, the authors presented the development of H-band (220 -325 GHz) low-noise amplifier MMICs for use in next generation high-resolution imaging systems using an advanced 70nm InAlAs/InGaAs based metamorphic high electron mobility transistor (MHEMT) technology.
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