다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Recent startling interest for lanthanide luminescence is stimulated by the continuously expanding need for luminescent materials meeting the stringent requirements of telecommunication, lighting, electroluminescent devices, (bio-)analytical sensors and bio-imaging set-ups. This critical review describes the latest developments in (i) the sensitization of near-infrared luminescence, (ii) “soft” luminescent materials (liquid crystals, ionic liquids, ionogels), (iii) electroluminescent materials for organic light emitting diodes, with emphasis on white light generation, and (iv) applications in luminescent bio-sensing and bio-imaging based on time-resolved detection and multiphoton excitation (500 references).

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Lanthanide luminescence for functional materials and bio-sciences

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Review on recent progress of nanostructured anode materials for Li-ion batteries

The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses of interfacial Ti‐bonding layers. Reactions in the Pt/Ti/SiO2/Si interface were examined as a function of various annealing conditions in the temperature range 200–800 °C by using Rutherford backscattering spectrometry, Auger electron spectroscopy, x‐ray diffraction, and transmission electron microscopy. Thermal treatment in oxygen was found to cause rapid oxidation of the Ti layer, accompanied by the migration of Ti into the Pt film. Diffusion of oxygen through the Pt grain boundaries was mainly responsible for the adverse reactions at the interface and loss of mechanical integrity. Thin Ti (10 nm) layers resulted in the depletion of the interfacial bonding layer causing serious adhesion problems, whereas thicker Ti films (100 nm) caused the formation of TiO2−x in the Pt‐grain boundaries, ultimately encapsulating the Pt surface with an insulating TiO2 layer. Improved stability and adhesion in the Pt/Ti bilayer metallization compatible with ferroelectric thin film processing, were achieved by incorporating well reacted thin TiO2 layers in situ, and depositing Pt films at a high temperature.

Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

We report production of nanostructured magnetic carbon foam by a high-repetition-rate, high-power laser ablation of glassy carbon in $\mathrm{Ar}$ atmosphere. A combination of characterization techniques revealed that the system contains both $s{p}^{2}$ and $s{p}^{3}$ bonded carbon atoms. The material is a form of carbon containing graphite-like sheets with hyperbolic curvature, as proposed for ``schwarzite.'' The foam exhibits ferromagnetic-like behavior up to $90\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, with a narrow hysteresis curve and a high saturation magnetization. Such magnetic properties are very unusual for a carbon allotrope. Detailed analysis excludes impurities as the origin of the magnetic signal. We postulate that localized unpaired spins occur because of topological and bonding defects associated with the sheet curvature, and that these spins are stabilized due to the steric protection offered by the convoluted sheets.

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Unconventional Magnetism in All-Carbon Nanofoam

Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.

Thin amorphous silicon layers can be produced in crystalline silicon substrates by ion-implantation. Subsequent ion-irradiation at elevated temperatures can induce such layers to either crystallize epitaxially or increase in thickness, layer by layer. This paper examines these processes and their dependence on substrate temperature and ion-irradiation parameters. It is shown that both processes, epitaxial crystallization and layer-by-layer amorphization, are controlled by ion-beam induced defect production at, or near, the crystalline/amorphous interface. The competition between defect production (determined by the ion flux and rate of nuclear energy deposition) and dynamic defect annealing (determined by the substrate temperature) is shown to play an important role in determining whether the layer crystallizes or amorphizes. Possible models for the observed behavior are discussed.

Ion-beam-induced crystallization and amorphization of silicon

A phenomenological model of the solid-phase epitaxial growth process is proposed to account for the influence of substrate orientation and doping on growth kinetics. The model combines structural features of the amorphous-crystalline interface with electronic processes related to changes in the Fermi level. The basic premise is that the concentration of kinklike growth sites at the interface, and hence the growth velocity, can be influenced by doping in a manner analogous to the enhancement of dislocation velocities by doping.

Robert Elliman

Papers

Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

Unconventional Magnetism in All-Carbon Nanofoam

Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.

Ion-beam-induced crystallization and amorphization of silicon

Role of electronic processes in epitaxial recrystallization of amorphous semiconductors