R
Rüdiger Goldhahn
Researcher at Otto-von-Guericke University Magdeburg
Publications - 195
Citations - 3546
Rüdiger Goldhahn is an academic researcher from Otto-von-Guericke University Magdeburg. The author has contributed to research in topics: Band gap & Photoluminescence. The author has an hindex of 33, co-authored 178 publications receiving 3223 citations. Previous affiliations of Rüdiger Goldhahn include Technische Universität Ilmenau & University of Nottingham.
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Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3
Martin Feneberg,Sarah Osterburg,Karsten Lange,Christian Lidig,Bernd Garke,Rüdiger Goldhahn,Eberhard Richter,Carsten Netzel,Maciej D. Neumann,Norbert Esser,S. Fritze,Hartmut Witte,Jürgen Bläsing,Armin Dadgar,Alois Krost +14 more
TL;DR: In this paper, the interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-type wurtzite GaN was investigated, and the dependence of the band gap energy and the Fermi edge on electron density was determined.
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Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry
S. Shokhovets,Rüdiger Goldhahn,Gerhard Gobsch,S. Piekh,R. Lantier,A. Rizzi,Vadim Lebedev,Wo. Richter +7 more
TL;DR: In this paper, variable angle spectroscopic ellipsometry (SE) was used to determine both ordinary and extraordinary dielectric functions (DFs) in the transparent region of group III nitride wurtzite films even if the optical axis is oriented normal to the surface plane.
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Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
Philip David King,Tim D. Veal,Christopher F McConville,Frank Fuchs,Jürgen Furthmüller,Friedhelm Bechstedt,P. Schley,Rüdiger Goldhahn,Jörg Schörmann,Donat Josef As,Klaus Lischka,D. Muto,H. Naoi,Yasushi Nanishi,Huaixian Lu,William J. Schaff +15 more
TL;DR: In this article, electron accumulation was found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy.
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Energy gap and optical properties of InxGa1–xN
Friedhelm Bechstedt,Jürgen Furthmüller,Mohamed Ferhat,Lara K. Teles,L. M. R. Scolfaro,J. R. Leite,V. Yu. Davydov,Oliver Ambacher,Rüdiger Goldhahn +8 more
TL;DR: In this article, an energy gap of InN < 1 eV and a nonparabolic absorption edge was found for InN 1-x N. The results are critically discussed in the light of recent experiments.
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Molecular beam epitaxy of phase pure cubic InN
J. Schörmann,Donat Josef As,Klaus Lischka,P. Schley,Rüdiger Goldhahn,S. Li,Wolfgang Löffler,Michael Hetterich,Heinz Kalt +8 more
TL;DR: In this article, a cubic InN layer was grown by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates at growth temperatures from 419to490°C.