Journal ArticleDOI
Energy gap and optical properties of InxGa1–xN
Friedhelm Bechstedt,Jürgen Furthmüller,Mohamed Ferhat,Lara K. Teles,L. M. R. Scolfaro,J. R. Leite,V. Yu. Davydov,Oliver Ambacher,Rüdiger Goldhahn +8 more
TLDR
In this article, an energy gap of InN < 1 eV and a nonparabolic absorption edge was found for InN 1-x N. The results are critically discussed in the light of recent experiments.Abstract:
We present ab initio calculations of the electronic structure and the optical properties of In x Ga 1-x N. They are completed by studies of the strain influence on the alloys. The results are critically discussed in the light of recent experiments. We find an energy gap of InN < 1 eV and a nonparabolic absorption edge. The strong variation of the alloy gap with the In molar fraction is described by a composition-dependent bowing parameter. The tendency of spinodal decomposition is suppressed by biaxial strain. Its extent depends on the realization of strain accommodation.read more
Citations
More filters
Journal ArticleDOI
X-ray diffraction of III-nitrides
Michelle A. Moram,M E Vickers +1 more
TL;DR: In this article, the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides, are reviewed, along with the basic principle of X-ray diffusion of thin thin films, and some useful values needed in calculations, including elastic constants and lattice parameters.
Journal ArticleDOI
Intrinsic electron accumulation at clean InN surfaces.
TL;DR: An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN, which produces charged donor-type surface states with associated downward band bending.
Journal ArticleDOI
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN.
TL;DR: Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory and it is found that relative alignments are less sensitive to the choice of XC functional.
Journal ArticleDOI
Structure and electronic properties of InN and In-rich group III-nitride alloys
Wladek Walukiewicz,Joel W. Ager,Kin Man Yu,Zuzanna Liliental-Weber,Junqiao Wu,S. X. Li,S. X. Li,R. E. Jones,R. E. Jones,Jonathan D. Denlinger +9 more
TL;DR: The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed in this article, where the electron effective mass in InN is interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap.
Journal ArticleDOI
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
TL;DR: The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires.