Ryo Wakabayashi

TL;DR: In this article, the growth of Si-doped Ga2O3 films on MgO (100) substrates by pulsed-laser deposition as a function of growth temperature (Tg) was investigated to find a strong correlation between the structural and electronic properties.

TL;DR: In this article, high-quality β-(AlxGa1−x)2O3 (100) films were epitaxially grown on β-Ga2O 3/α-Al 2O3 substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-alga2o3 and α-Al2O-3.

TL;DR: In this article, the impacts of oxygen-radical (O ⁎ ) atmosphere for pulsed-laser deposition (PLD) of β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O3 films on (010) β-Ga 2O 3 substrate in comparison with conventional PLD in O 2 atmosphere were reported.

TL;DR: Sputter-deposited indium-tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga2O3(010) substrates with a carrier concentration of 2 × 1017 cm−3 after rapid thermal annealing as discussed by the authors.

TL;DR: In this paper, the authors investigated the epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O 3(010) substrates and found that the α-Al 2O3 layer had a band gap of 7.0 eV and a type-I band alignment with α-Ga 2O 3 with conduction and valence band offsets of 1.9 and 0.5 eV, respectively.