S
S. J. Pennycook
Researcher at Oak Ridge National Laboratory
Publications - 247
Citations - 5433
S. J. Pennycook is an academic researcher from Oak Ridge National Laboratory. The author has contributed to research in topics: Scanning transmission electron microscopy & Thin film. The author has an hindex of 41, co-authored 245 publications receiving 5202 citations. Previous affiliations of S. J. Pennycook include University of Cádiz & Spanish National Research Council.
Papers
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Journal ArticleDOI
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface
Yuewei Yin,Yuewei Yin,John D. Burton,Y-M. Kim,Albina Y. Borisevich,S. J. Pennycook,Sang Mo Yang,Tae Won Noh,Alexei Gruverman,Xiaoguang Li,Evgeny Y. Tsymbal,Qi Li +11 more
TL;DR: Electrical, ferroelectric and magnetoresistive measurements combined with first-principles calculations provide evidence for a magnetoelectric origin of the enhanced TER, and indicate the presence of defect-mediated conduction in the FTJs.
Journal ArticleDOI
Atomic arrangement of iodine atoms inside single-walled carbon nanotubes
X. Fan,Elizabeth C. Dickey,P. C. Eklund,Keith A. Williams,L. Grigorian,R. Buczko,Sokrates T. Pantelides,S. J. Pennycook +7 more
TL;DR: At atomic resolution Z-contrast scanning transmission electron microscopy images that reveal the incorporation of I atoms in the form of helical chains inside single-walled carbon nanotubes are reported.
Journal ArticleDOI
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
Gennadi Bersuker,Chanro Park,Joel Barnett,Patrick S. Lysaght,Paul Kirsch,Chadwin D. Young,Rino Choi,Byoung Hun Lee,Brendan Foran,K. van Benthem,S. J. Pennycook,Patrick M. Lenahan,Jason T. Ryan +12 more
TL;DR: In this article, the influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated, and it is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.
Journal ArticleDOI
Self-Limiting Growth of Strained Faceted Islands
TL;DR: In this paper, the growth of faceted semiconductor islands was investigated and the island growth rate was found to rapidly self-limit, which has important consequences for island size distributions.
Book ChapterDOI
Structure determination through Z-contrast microscopy
TL;DR: In this article, the authors outlined the quantum mechanical basis for regarding Z-contrast imaging and EELS in the STEM as directly interpretable, column-by-column imaging and analysis.