Patrick S. Lysaght

TL;DR: In this article, the influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated, and it is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.

TL;DR: The mapping of discrete electronic domains within a single graphene sheet is shown using scanning transmission X-ray microscopy in conjunction with ab initio density functional theory calculations to provide resolution of a longstanding debate in the literature regarding the spectral assignments of pre-edge and interlayer states.

TL;DR: Grazing-incidence small-angle x-ray scattering (GISAXS) and high-resolution transmission electron microscopy (HRTEM) were used to investigate phase separation in hafnium silicate films after rapid thermal annealing between 700 and 1000

TL;DR: In this article, the authors discuss the microstructure evolution during annealing of amorphous ZrO2-SiO2 and HfO2−SiO 2 thin films for gate dielectric applications, and show that phase partitioning is expected for most compositions.

TL;DR: In this paper, high-k deposition on thinner SiO2 films, below 1.1 nm, may lead to the formation of a highly oxygen deficient amorphous interfacial layer adjacent to the Si substrate.