G
Gennadi Bersuker
Researcher at SEMATECH
Publications - 440
Citations - 9628
Gennadi Bersuker is an academic researcher from SEMATECH. The author has contributed to research in topics: High-κ dielectric & Gate dielectric. The author has an hindex of 49, co-authored 436 publications receiving 9025 citations.
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Journal ArticleDOI
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
TL;DR: In this article, the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 were calculated using a non-local density functional theory with atomic basis sets and periodic supercell.
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Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks
TL;DR: In this article, the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell.
Journal ArticleDOI
A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
Luca Vandelli,Andrea Padovani,Luca Larcher,Richard G. Southwick,William B. Knowlton,Gennadi Bersuker +5 more
TL;DR: In this paper, the authors investigate the characteristics of the defects responsible for leakage current in the SiO2 and SiO 2/HfO2 gate dielectric stacks in a wide temperature range (6 K-400 K).
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Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory
TL;DR: In this paper, the electronic structure and spectroscopic properties of the oxygen vacancy in different charge states in the monoclinic phase of the material were calculated using density functional theory and a hybrid density functional.
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
Paul Kirsch,P. Sivasubramani,Jiacheng Huang,Chadwin D. Young,Manuel Quevedo-Lopez,Huang-Chun Wen,Huang-Chun Wen,Husam N. Alshareef,K.J. Choi,K.J. Choi,Chanro Park,K. Freeman,Muhammad Mustafa Hussain,Gennadi Bersuker,H.R. Harris,Prashant Majhi,Prashant Majhi,Rino Choi,P. Lysaght,B. H. Lee,H.-H. Tseng,Rajarao Jammy,Rajarao Jammy,T. S. Böscke,Daniel J. Lichtenwalner,Jesse S. Jur,Angus I. Kingon +26 more
TL;DR: In this paper, an interface dipole model explaining threshold voltage tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed, which is very similar to the trends in dopant electronegativity (EN) and ionic radius (r) expected for a interfacial dipole mechanism.