S
Sa Hoang Huynh
Researcher at National Chiao Tung University
Publications - 21
Citations - 151
Sa Hoang Huynh is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Chemical vapor deposition & Epitaxy. The author has an hindex of 6, co-authored 20 publications receiving 92 citations.
Papers
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Journal ArticleDOI
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO 2 /In 0.53 Ga 0.47 As Metal–Oxide–Semiconductor Field-Effect Transistors
Quang Ho Luc,Shou Po Cheng,Po-Chun Chang,Huy Binh Do,Jin Han Chen,Minh Thien Huu Ha,Sa Hoang Huynh,C. Hu,Yueh Chin Lin,Edward Yi Chang +9 more
TL;DR: In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As MOSFET as discussed by the authors.
Journal ArticleDOI
In 0.53 Ga 0.47 As FinFET and GAA-FET With Remote-Plasma Treatment
Quang Ho Luc,Kun Sheng Yang,Jia Wei Lin,Chia Chi Chang,Huy Binh Do,Sa Hoang Huynh,Minh Thien Huu Ha,Tuan Anh Nguyen,Yueh Chin Lin,Chenming Hu,Edward Yi Chang +10 more
TL;DR: In this paper, a remote NH3/N2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFETs was presented.
Journal ArticleDOI
Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy.
TL;DR: Understanding of molecular beam epitaxy growth of 2D materials on three-dimensional substrates is provided and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.
Journal ArticleDOI
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy.
Cheng Wei Liu,Jin Ji Dai,Ssu Kuan Wu,Nhu Quynh Diep,Sa Hoang Huynh,Thi Thu Mai,Hua Chiang Wen,Chi-Tsu Yuan,Wu-Ching Chou,Ji-Lin Shen,Huy Hoang Luc +10 more
TL;DR: The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of2D layered GaSe materials for novel optoelectronic integrated technologies.
Journal ArticleDOI
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
TL;DR: In this article, the influence of growth parameters, such as growth temperature, indium vapor composition, and V/III ratio, on the film properties was investigated, and it was found that the growth temperature has the strongest effect on the surface morphology and the crystal quality of the InxGa1-xSb epilayer.