H
Huy Binh Do
Researcher at National Chiao Tung University
Publications - 25
Citations - 258
Huy Binh Do is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Heterojunction & MOSFET. The author has an hindex of 7, co-authored 19 publications receiving 161 citations. Previous affiliations of Huy Binh Do include Ho Chi Minh City University of Technology.
Papers
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Journal ArticleDOI
Mesostructured g-C3N4 nanosheets interconnected with V2O5 nanobelts as electrode for coin-cell-type-asymmetric supercapacitor device
K.C. Devarayapalli,Kiyoung Lee,Huy Binh Do,Nam Nguyen Dang,Kisoo Yoo,Jae-Jin Shim,S.V. Prabhakar Vattikuti +6 more
TL;DR: In this paper, a coin-cell-type supercapacitor was constructed using an efficient one-pot approach using two nanostructures comprising V 2O5 nanobelts, with and without cetyltrimethylammonium bromide (CTAB)-modified g-C3N4 nanosheets.
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Electrical Characteristics of n, p-In 0.53 Ga 0.47 As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Quang Ho Luc,Edward Yi Chang,Hai Dang Trinh,Yueh Chin Lin,Hong Quan Nguyen,Yuen Yee Wong,Huy Binh Do,Sayeef Salahuddin,C. Hu +8 more
TL;DR: In this paper, the effects of PEALD-AlN interfacial passivation layer (IPL) on MOS capacitors with different plasma powers were studied, including capacitance-voltage hysteresis, frequency dispersion, and interface state densities.
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Plasma Enhanced Atomic Layer Deposition Passivated HfO 2 /AlN/In 0.53 Ga 0.47 As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
TL;DR: In this paper, the impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/AlN/In0.53Ga0.47As capacitors has been studied.
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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO 2 /In 0.53 Ga 0.47 As Metal–Oxide–Semiconductor Field-Effect Transistors
Quang Ho Luc,Shou Po Cheng,Po-Chun Chang,Huy Binh Do,Jin Han Chen,Minh Thien Huu Ha,Sa Hoang Huynh,C. Hu,Yueh Chin Lin,Edward Yi Chang +9 more
TL;DR: In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As MOSFET as discussed by the authors.
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Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo.
Sangho Kim,Thanh Thuy Trinh,Thanh Thuy Trinh,Jinjoo Park,Duy Phong Pham,Sunhwa Lee,Huy Binh Do,Nam Nguyen Dang,Vinh Ai Dao,Joondong Kim,Junsin Yi +10 more
TL;DR: In this article, a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom subcell absorbs the solar spectrum from both the front and rear sides was developed.