S
Sakari Sintonen
Researcher at Aalto University
Publications - 36
Citations - 732
Sakari Sintonen is an academic researcher from Aalto University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 15, co-authored 35 publications receiving 613 citations. Previous affiliations of Sakari Sintonen include Helsinki University of Technology & Institut für Kristallzüchtung.
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Journal ArticleDOI
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Oili Ylivaara,Xuwen Liu,Lauri Kilpi,Jussi Lyytinen,Dieter Schneider,Mikko Laitinen,Jaakko Julin,Saima Ali,Sakari Sintonen,Maria Berdova,Eero Haimi,Timo Sajavaara,Helena Ronkainen,Harri Lipsanen,Jari Koskinen,Simo-Pekka Hannula,Riikka L. Puurunen +16 more
TL;DR: In this paper, a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300°C from trimethylaluminum and water is presented.
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Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Matti Putkonen,Markus Bosund,Oili Ylivaara,Riikka L. Puurunen,Lauri Kilpi,Helena Ronkainen,Sakari Sintonen,Saima Ali,Harri Lipsanen,Xuwen Liu,Eero Haimi,Simo-Pekka Hannula,Timo Sajavaara,Iain Buchanan,Eugene Joseph Karwacki,Mika Vähä-Nissi +15 more
TL;DR: In this article, the authors report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD), and several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools.
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Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
Carsten Hartmann,Jürgen Wollweber,Sakari Sintonen,Andrea Dittmar,Lutz Kirste,S. Kollowa,Klaus Irmscher,Matthias Bickermann +7 more
TL;DR: In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN crystals are evaluated with regard to significantly increased deep UV transparency, while maintaining the high structural quality of the AlN crystal which are grown on N-polar c-facets.
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Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
Oili Ylivaara,Lauri Kilpi,Xuwen Liu,Sakari Sintonen,Saima Ali,Mikko Laitinen,Jaakko Julin,Eero Haimi,Timo Sajavaara,Harri Lipsanen,Simo-Pekka Hannula,Helena Ronkainen,Riikka L. Puurunen +12 more
TL;DR: In this article, the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300°C), film thickness (20-300nm), bilayer thickness (0.1-100nm), and TiO2 content (0%−100%).
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Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN.
Sakari Sintonen,M. Rudziński,Sami Suihkonen,Henri Jussila,Michael Knetzger,Elke Meissner,Andreas N. Danilewsky,T. Tuomi,Harri Lipsanen +8 more
TL;DR: In this article, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated.