O
Oili Ylivaara
Researcher at VTT Technical Research Centre of Finland
Publications - 35
Citations - 635
Oili Ylivaara is an academic researcher from VTT Technical Research Centre of Finland. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 12, co-authored 30 publications receiving 484 citations.
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Journal ArticleDOI
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Oili Ylivaara,Xuwen Liu,Lauri Kilpi,Jussi Lyytinen,Dieter Schneider,Mikko Laitinen,Jaakko Julin,Saima Ali,Sakari Sintonen,Maria Berdova,Eero Haimi,Timo Sajavaara,Helena Ronkainen,Harri Lipsanen,Jari Koskinen,Simo-Pekka Hannula,Riikka L. Puurunen +16 more
TL;DR: In this paper, a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300°C from trimethylaluminum and water is presented.
Journal ArticleDOI
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
Matti Putkonen,Markus Bosund,Oili Ylivaara,Riikka L. Puurunen,Lauri Kilpi,Helena Ronkainen,Sakari Sintonen,Saima Ali,Harri Lipsanen,Xuwen Liu,Eero Haimi,Simo-Pekka Hannula,Timo Sajavaara,Iain Buchanan,Eugene Joseph Karwacki,Mika Vähä-Nissi +15 more
TL;DR: In this article, the authors report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD), and several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools.
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Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
Esko Ahvenniemi,Andrew R. Akbashev,Saima Ali,Mikhael Bechelany,Maria Berdova,Stefan Ivanov Boyadjiev,David Campbell Cameron,Rong Chen,Mikhail Chubarov,Véronique Cremers,Anjana Devi,Viktor Drozd,Liliya Elnikova,Gloria Gottardi,Kestutis Grigoras,Dennis M. Hausmann,Cheol Seong Hwang,Shih Hui Jen,Tanja Kallio,Jaana Kanervo,Ivan Khmelnitskiy,Dohan Kim,Lev Klibanov,Yury Koshtyal,A. Outi I. Krause,Jakob Kuhs,Irina Kärkkänen,Marja-Leena Kääriäinen,Tommi Kääriäinen,Luca Lamagna,Adam A. Łapicki,Markku Leskelä,Harri Lipsanen,Jussi Lyytinen,A. A. Malkov,A. A. Malygin,Abdelkader Mennad,Christian Militzer,Jyrki Molarius,Małgorzata Norek,Çaǧla Özgit-Akgün,Mikhail Panov,Henrik Pedersen,Fabien Piallat,Georgi Popov,Riikka L. Puurunen,Geert Rampelberg,Robin H. A. Ras,Erwan Rauwel,Fred Roozeboom,Fred Roozeboom,Timo Sajavaara,Hossein Salami,Hele Savin,Nathanaelle Schneider,Thomas E. Seidel,Jonas Sundqvist,Dmitry Suyatin,Tobias Törndahl,J. Ruud van Ommen,Claudia Wiemer,Oili Ylivaara,Oksana Yurkevich +62 more
TL;DR: The Virtual Project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of atomic layer deposition more transparent.
Journal ArticleDOI
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
Oili Ylivaara,Lauri Kilpi,Xuwen Liu,Sakari Sintonen,Saima Ali,Mikko Laitinen,Jaakko Julin,Eero Haimi,Timo Sajavaara,Harri Lipsanen,Simo-Pekka Hannula,Helena Ronkainen,Riikka L. Puurunen +12 more
TL;DR: In this article, the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300°C), film thickness (20-300nm), bilayer thickness (0.1-100nm), and TiO2 content (0%−100%).
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Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
Lauri Kilpi,Oili Ylivaara,Antti Vaajoki,Jari Malm,Sakari Sintonen,Marko Tuominen,Riikka L. Puurunen,Helena Ronkainen +7 more
TL;DR: In this article, the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points.