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Sanghyeon Kim

Researcher at KAIST

Publications -  219
Citations -  2922

Sanghyeon Kim is an academic researcher from KAIST. The author has contributed to research in topics: MOSFET & Electron mobility. The author has an hindex of 29, co-authored 167 publications receiving 2359 citations. Previous affiliations of Sanghyeon Kim include Korea University of Science and Technology & Kigali Institute of Science and Technology.

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The Stanley Neuropathology Consortium Integrative Database: a Novel, Web-Based Tool for Exploring Neuropathological Markers in Psychiatric Disorders and the Biological Processes Associated with Abnormalities of Those Markers

TL;DR: This report replicates an earlier correlation analysis between genome-wide expression profiles and an abnormal cytoarchitectural marker using the SNCID and identifies biological pathways associated with several abnormal neuropathological markers, including those in the dopamine, glutamate, Reelin, and γ-aminobutyric acid systems.
Journal ArticleDOI

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

TL;DR: New concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique are reported, which leads to a dramatic cost reduction.