S
Satoshi Nagai
Researcher at Toshiba
Publications - 113
Citations - 911
Satoshi Nagai is an academic researcher from Toshiba. The author has contributed to research in topics: Ultrasonic sensor & Signal. The author has an hindex of 15, co-authored 113 publications receiving 891 citations.
Papers
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Patent
Temperature measuring apparatus
TL;DR: In this paper, a pair of ultrasonic transducers are disposed, through waveguide rods, in opposition to the surface of a pipe through which a liquid flows, and a switch is connected with a switch.
Patent
Ultrasonic flaw detection method and apparatus
TL;DR: In this article, an array type ultrasonic probe is selected as an ultrasonic transmitting vibrator for receiving the diffracted or reflected waves of the ultrasonic waves transmitted from the UAV.
Patent
Electronic scanning type ultrasonic test equipment
TL;DR: In this article, the authors used an array type probe on which plural vibrators for transmitting and receiving an ultrasonic wave have been provided in parallel, and controlled the timing for energizing and reception of the vibrator.
Patent
Plant maintenance planification method and apparatus
Seiichi Asatsu,Toshihiro Fujiwara,Kazunari Fujiyama,Shigeru K.K. Toshiba Harada,Taiji Hirasawa,Fumiharu K.K. Toshiba Ishii,Takayuki Iwahashi,Hitoshi Kichise,Hirotsugu Kodama,Masanori Minowa,Satoshi Nagai,Mitsuyoshi Okazaki,Kazuhiro Saito,Mamoru Sudo +13 more
TL;DR: In this paper, a failure event tree breakdown is performed on failures to be expected for the equipment and preventive maintenance expenses are calculated for preventing failure events, where the failure tree is calculated based on failure unreliability function and a cost of recovery from each failure event is calculated.
Patent
Overlay control method, semiconductor manufacturing method, and semiconductor manufacturing device
Satoshi Nagai,聡 永井 +1 more
TL;DR: In this paper, the authors propose an overlay control method that enables the introduction of next-generation lithography to semiconductor device manufacturing by measuring misalignment between a first pattern of a first layer on a substrate and a second pattern of another layer on the substrate by means of the second layer.