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Seema Verma

Researcher at Banasthali Vidyapith

Publications -  153
Citations -  1178

Seema Verma is an academic researcher from Banasthali Vidyapith. The author has contributed to research in topics: Dielectric & Encryption. The author has an hindex of 15, co-authored 152 publications receiving 744 citations. Previous affiliations of Seema Verma include Amity University & International Institute of Minnesota.

Papers
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Journal ArticleDOI

Constraints on low-mass, relic dark matter candidates from a surface-operated SuperCDMS single-charge sensitive detector

D. W. P. Amaral, +128 more
- 28 May 2020 - 
TL;DR: In this article, the authors present an analysis and the resulting limits on light dark matter inelastically scattering off of electrons, and on dark photon and axion-like particle absorption, using a second-generation SuperCDMS high-voltage eV-resolution detector.
Proceedings ArticleDOI

A survey on driver behavior detection techniques for intelligent transportation systems

TL;DR: A comparative analysis was performed on the basis of advantages, disadvantages and methodology applied by various techniques for detecting driver's behavior for Intelligent Transportation Systems (ITS).
Journal ArticleDOI

Light Dark Matter Search with a High-Resolution Athermal Phonon Detector Operated above Ground.

I. Alkhatib, +135 more
TL;DR: This exclusion analysis sets the most stringent dark matter-nucleon scattering cross-section limits achieved by a cryogenic detector for dark matter particle masses from 93 to 140 MeV/c^{2}, with a raw exposure of 9.9 g d acquired at an above-ground facility.
Journal ArticleDOI

Constraints on dark photons and axionlike particles from the SuperCDMS Soudan experiment

TL;DR: In this paper, the authors present an analysis of electron recoils in cryogenic germanium detectors operated during the SuperCDMS Soudan experiment, which is used to set new constraints on the axioelectric coupling of axion-like particles and the kinetic mixing parameter of dark photons.
Journal ArticleDOI

Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical Model

TL;DR: In this article, an analytical model has been proposed to evaluate the effect of temperature on gate-induced drain leakages (GIDL) in a dual-metal nanowire field effect transistor.