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Shengnan Yan
Researcher at University of Electronic Science and Technology of China
Publications - 14
Citations - 513
Shengnan Yan is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Magnetic field & Selectivity. The author has an hindex of 8, co-authored 8 publications receiving 270 citations.
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Enhanced NH 3 gas-sensing performance of silica modified CeO 2 nanostructure based sensors
TL;DR: In this article, the 8%silica-CeO2 based gas sensor exhibits significant enhancement NH3 gas-sensing performance, which is not only because of the increased specific surface areas, but also due to the electrolytic conductivity of NH4+ and OH− on the surface.
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Hydrogen gas sensor based on mesoporous In2O3 with fast response/recovery and ppb level detection limit
Zhijie Li,Shengnan Yan,Zhonglin Wu,Hao Li,Junqiang Wang,Wenzhong Shen,Zhiguo Wang,Yong Qing Fu +7 more
TL;DR: In this article, the mesoporous In2O3 sensors exhibited good reversibility and repeatability towards hydrogen gas and showed a good selectivity for hydrogen compared to other commonly investigated gases including NH3, CO, ethyl alcohol, styrene, CH2Cl2 and formaldehyde.
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Hydrothermal synthesis of hierarchically flower-like CuO nanostructures with porous nanosheets for excellent H 2 S sensing
TL;DR: In this article, a gas sensor to hydrogen sulfide (H2S) based on these porous flower-like CuO nanostructures exhibited high sensitivity, good reproducibility and long-term sensing stability.
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Ultra-sensitive room-temperature H2S sensor using Ag–In2O3 nanorod composites
TL;DR: In this paper, an ultra-sensitive H2S sensor was fabricated using Ag-In2O3 nanorod composites synthesized using sol-hydrothermal method followed by NaBH4 reduction process.
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Heterostructured NiO/ZnO Nanorod Arrays with Significantly Enhanced H2S Sensing Performance.
TL;DR: H2S gas sensors were fabricated using p-n heterojunctions of NiO/ZnO, in which the ZnO nanorod arrays were wrapped with NiO nanosheets via a hydrothermal synthesis method, and it was found that when the sensor was exposed to H2S at an operating temperature below 160 °C, the resistance of the sensor significantly decreased, indicating its n-type semiconductor nature, whereas when the operating temperature was above160 °C