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Design Of Analog Cmos Integrated Circuits

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A strain sensor has been fabricated from a polymer nanocomposite with multiwalled carbon nanotube (MWNT) fillers. The piezoresistivity
of this nanocomposite strain sensor has been investigated based on an improved three-dimensional (3D) statistical resistor network
model incorporating the tunneling effect between the neighboring carbon nanotubes (CNTs), and a fiber reorientation model. The
numerical results agree very well with the experimental measurements. As compared with traditional strain gauges, much higher sensitivity
can be obtained in the nanocomposite sensors when the volume fraction of CNT is close to the percolation threshold. For a small
CNT volume fraction, weak nonlinear piezoresistivity is observed both experimentally and from numerical simulation. The tunneling
effect is considered to be the principal mechanism of the sensor under small strains.

Tunneling effect in a polymer/carbon nanotube nanocompositestrain sensor

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

A system for designing a therapy or for treating a gastrointestinal disorder or a condition associated with excess weight in a subject comprising at least one electrode configured to be implanted within a body of the patient and placed at a vagus nerve, the electrode also configured to apply therapy to the vagus nerve upon application of a therapy cycle to the electrode; an implantable neuroregulator for placement in the body of the patient beneath the skin layer, the implantable neuroregulator being configured to generate a therapy cycle, wherein the therapy cycle comprises an on time during which an electrical signal is delivered, the electrical signal comprising: a) a set of pulses applied at a first selected frequency of about 150-10,000 Hz, wherein each pulse of the set of pulses has a pulse width of at least 0.01 milliseconds and less than the period of the first selected frequency.

Neural modulation devices and methods

A high-gain and low-noise micromachined CMOS distributed amplifier (DA) using cascaded gain cell, which constitutes an inductively parallel-peaking cascode-stage with a low-Q RLC load and an inductively series-peaking common-source stage, is demonstrated.Flat and high S21 and flat and low noise figure (NF) are achieved simultaneously by adopting a slightly under-damped Q-factor for the second-order transconductance frequency response of the proposed cascaded gain cell. The two-stage DA consumes 37.8 mW and achieves flat and high S21 of 20.47 ± 0.72 dB with an average NF of only 3.3 dB over the 3∼10 GHz band of interest, one of the best reported NF performances for a CMOS UWB DA or LNA in the literature. In addition, the result shows that a 0.84-dB increase in average S21 (from 20.47 to 21.31 dB) and a 0.2-dB decrease (from 3.3 to 3.1 dB) in average NF are achieved mainly due to the improvement of the quality factor of the inductors in the DA. This means that this DA architecture in conjunction with the backside ICP dry-etching technique is very promising for high-performance 3∼10 GHz UWB communication systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1163–1167, 2012

A 3.1‐dB NF, 21.31 dB gain micromachined 3–10 GHz distributed amplifier for UWB systems in 0.18‐μm CMOS technology

A coplanar waveguide (CPW) was implemented in 0.13 μm CMOS technology and then postprocessed by CMOS compatible inductively-coupled plasma etching, which removed the silicon underneath the coplanar strips. Transmission line parameters such as characteristic impedance ZO, attenuation constant α, substrate capacitance/conductance C/G, series inductance/resistance L/R, as a function of frequency were extracted. It is found that α, C, and G can be greatly improved after silicon removal. Specifically, a 0.45 dB/mm reduction (from 0.5 to 0.05 dB/mm) in α, a 1.6 mS/mm reduction (from 1.6 to ∼0 mS/mm) in G, and a 43.9% reduction (from 92.8 to 52.1 fF/mm) in C were achieved at 20 GHz. In addition, this work also investigates the dielectric loss αd and conductive loss αc of the CPW. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2665–2668, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24693

The RF characteristics of micromachined coplanar waveguide in 0.13 μm CMOS technology by CMOS compatible ICP dry etching

In this paper, a theory based on dual-feedback circuit methodology is adopted to explain the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs. It is found that the output impedance intrinsically behaves as a series RC circuit (for low substrate resistance) or a “shifted” series RC circuit (for very high substrate resistance) at low frequencies, and a parallel RC circuit at high frequencies. This inherent triple characteristic of the output impedance can cause two types of anomalous dips of S22 in a Smith chart. In this way, the two experimental results [1, 2], that is, the anomalous dips caused by high substrate resistance and high trans-conductance (or wide gate-width), can be explained simultaneously for the first time. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 193–200, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10718

Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub‐micrometer MOSFETs

A system integrating temperature, pressure and voice sensors is proposed for a smart oral appliance for use in diagnosing and alleviating obstructive sleep apnea (OSA). Using sealed bio-compatible packaging for intraoral use, this system is also capable of wireless charging and data transmission. This proposed design aims to enhance the effectiveness and convenience of OSA treatment.

/pdf/a-wirelessly-rechargeable-integrated-system-for-automatic-erfzvw0w2w.pdf

A Wirelessly Rechargeable Integrated System for Automatic Sleep Monitoring in a Smart Oral Appliance

This paper presents a design of batteryless CMOS system-on-a-chip (SoC) with dual-mode programmable pulsed radio-frequency (PRF) stimulation, temperature detection, and wireless communication for trigeminal neuralgia alleviation on demand. The system is capable of providing square wave, sinusoid wave, and patterned stimulation waveform, and the stimulation parameters which include pulse frequency, amplitude, duty cycle, and pulse duration, can be wirelessly reconfigured by the external handheld device. The temperature sensor incorporated with analog front-end circuit can detect the temperature of body and SoC chip for the prevention of possible abnormal operation. All the information of stimulation parameters and temperature can be real-time monitored by a handheld device through wireless communication, which follows medical implanted communication system (MICS) standard. This SoC chip, whose dimension is 3.11 × 2.73 mm2, is fabricated in standard 0.35um CMOS process and mounted on a compact test board, whose size is 2.6 × 2.1 cm2, for delivering PRF stimulation in animal studies.

Shey-Shi Lu

Papers

A 3.1‐dB NF, 21.31 dB gain micromachined 3–10 GHz distributed amplifier for UWB systems in 0.18‐μm CMOS technology

The RF characteristics of micromachined coplanar waveguide in 0.13 μm CMOS technology by CMOS compatible ICP dry etching

Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub‐micrometer MOSFETs

A Wirelessly Rechargeable Integrated System for Automatic Sleep Monitoring in a Smart Oral Appliance

Trigeminal Neuralgia Alleviation on Demand with an CMOS SoC Using Current-mode Pulsed Radio-Frequency Stimulation