Shey-Shi Lu

TL;DR: In this article, the authors proposed a design method and circuits for a multi-band electronic circuit having at least one transistor having an input terminal and an inductor electrically connected to the input terminal of the transistor.

TL;DR: The first Ga0.51In0.49P/GaAs inverted-structure high electron mobility transistors (I-HEMT) and insulated-gate inverted-STM transistors grown by gas source molecular beam epitaxy (GSMBE) have been fabricated and measured.

TL;DR: In this article, the effect of piezoelectric charge densities in n-GaAs mesa resistors has been studied as a function of surface stress, and it is shown that the surface stresses induced by the deformation of cantilever beams can cause non-uniform stress distributions within the resistors, and the stress gradients consequently yield considerable piElectric charges that lead to an appreciable resistance change.

TL;DR: A batteryless wearable ECG monitoring system-in-a-patch assembled by a biocompatible and pliable silicon- in-parylene technology is introduced, capable of processing the acquired ECG signal and detecting arrhythmia by a built-in digital signal processor (DSP).

TL;DR: A low-power auto-wake-up image-reject receiver front-end in 90-nm CMOS technology is presented for V-band applications and Adjustable linearity (IP1dB) of the front- end is provided by changing two gain modes (high- and low-gain modes).