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Design Of Analog Cmos Integrated Circuits

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A strain sensor has been fabricated from a polymer nanocomposite with multiwalled carbon nanotube (MWNT) fillers. The piezoresistivity
of this nanocomposite strain sensor has been investigated based on an improved three-dimensional (3D) statistical resistor network
model incorporating the tunneling effect between the neighboring carbon nanotubes (CNTs), and a fiber reorientation model. The
numerical results agree very well with the experimental measurements. As compared with traditional strain gauges, much higher sensitivity
can be obtained in the nanocomposite sensors when the volume fraction of CNT is close to the percolation threshold. For a small
CNT volume fraction, weak nonlinear piezoresistivity is observed both experimentally and from numerical simulation. The tunneling
effect is considered to be the principal mechanism of the sensor under small strains.

Tunneling effect in a polymer/carbon nanotube nanocompositestrain sensor

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

A system for designing a therapy or for treating a gastrointestinal disorder or a condition associated with excess weight in a subject comprising at least one electrode configured to be implanted within a body of the patient and placed at a vagus nerve, the electrode also configured to apply therapy to the vagus nerve upon application of a therapy cycle to the electrode; an implantable neuroregulator for placement in the body of the patient beneath the skin layer, the implantable neuroregulator being configured to generate a therapy cycle, wherein the therapy cycle comprises an on time during which an electrical signal is delivered, the electrical signal comprising: a) a set of pulses applied at a first selected frequency of about 150-10,000 Hz, wherein each pulse of the set of pulses has a pulse width of at least 0.01 milliseconds and less than the period of the first selected frequency.

Neural modulation devices and methods

In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFETs. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S/sub 22/ observed in a Smith chart can be explained by the poles and zeros of S/sub 22/.

A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design

The provided fractional frequency divider includes a divider controlling unit for generating a divider selection signal in response to a dual-edge triggering of an input signal and a frequency dividing unit coupled to the divider controlling unit for dividing the frequency of the input signal by one of an integer and a fractional dividers in response to the dual-edge triggering and the divider selection signal to generate the output signal of the fractional frequency divider. An operation of the frequency dividing unit is not suppressed when the integer divider is employed, the operation of the frequency dividing unit is not suppressed for a period of the input signal and is suppressed for half of that period, and this cycle is kept on recurring when the fractional divider is employed. The fractional-n PLL having the fractional frequency divider is also provided.

Configuration and controlling method of fractional-N PLL having fractional frequency divider

Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET's, in which Ga/sub 0.51/In/sub 0.49/P insulating layer was inserted between the gate metal and the channel layer, were compared with MESFET's experimentally and theoretically in terms of DC and microwave performance. Devices performance were evaluated by varying the thickness of the insulating layer. Wide and flat characteristics of g/sub m/, g/sub t/, and f/sub max/ versus drain current (or gate voltage) together with a high maximum current density (above 610 mA/mm) were achieved for devices with insulating layer thickness of 50 mn and 100 mm. Moreover, the maximum values of J/sub t/'s and f/sub max/'s for a 1-/spl mu/m gate length device both occurred when t was between 50 and 100 mn. We also observed that parasitic capacitances and gate leakage currents were minimized by using the airbridge gate structure, and thus high-frequency and breakdown characteristics were greatly improved, These results demonstrate that Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's with insulating layer thickness between 50 and 100 mn were very suitable for microwave high-power device applications.

High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE

The availability of unlicensed mm-wave bands has fueled the research and development of mm-wave wireless systems. If different frequency bands can be operated from one signal source, it will reduce the circuit size and power consumption, leading to compact systems. For example, the frequencies 38, 57, 76GHz in 38, 60 and 77GHz bands can be generated by using only one PLL, as illustrated in Fig. 16.4.1. To address this requirement, in this paper, a multiband multimode injection-locked frequency divider (M-ILFD) is presented that meets the requirements for 38 and 57GHz applications.

A mm-wave CMOS multimode frequency divider

A low voltage (0.5 V) low power (3.1 mW) on-off keying (OOK) miniaturized (380 mum times 220 mum) monolithic receiver implemented in 0.18 mum CMOS technology for wireless local area sensor network is demonstrated. This chip can receive small radio signal well with a sensitivity of - 50 dBm (-62 dBm) and a maximum data rate of 2 Mbps at 433 MHz (150 MHz). When operated at 0.45 V, this receiver consumes less power (1.36 mW) with the same maximum data rate but a degraded sensitivity (-35 dBm) at 433 MHz

Shey-Shi Lu

Papers

A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design

Configuration and controlling method of fractional-N PLL having fractional frequency divider

High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE

A mm-wave CMOS multimode frequency divider

A 0.5 V 3.1 mW Fully Monolithic OOK Receiver for Wireless Local Area Sensor Network