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Design Of Analog Cmos Integrated Circuits

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A strain sensor has been fabricated from a polymer nanocomposite with multiwalled carbon nanotube (MWNT) fillers. The piezoresistivity
of this nanocomposite strain sensor has been investigated based on an improved three-dimensional (3D) statistical resistor network
model incorporating the tunneling effect between the neighboring carbon nanotubes (CNTs), and a fiber reorientation model. The
numerical results agree very well with the experimental measurements. As compared with traditional strain gauges, much higher sensitivity
can be obtained in the nanocomposite sensors when the volume fraction of CNT is close to the percolation threshold. For a small
CNT volume fraction, weak nonlinear piezoresistivity is observed both experimentally and from numerical simulation. The tunneling
effect is considered to be the principal mechanism of the sensor under small strains.

Tunneling effect in a polymer/carbon nanotube nanocompositestrain sensor

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

A system for designing a therapy or for treating a gastrointestinal disorder or a condition associated with excess weight in a subject comprising at least one electrode configured to be implanted within a body of the patient and placed at a vagus nerve, the electrode also configured to apply therapy to the vagus nerve upon application of a therapy cycle to the electrode; an implantable neuroregulator for placement in the body of the patient beneath the skin layer, the implantable neuroregulator being configured to generate a therapy cycle, wherein the therapy cycle comprises an on time during which an electrical signal is delivered, the electrical signal comprising: a) a set of pulses applied at a first selected frequency of about 150-10,000 Hz, wherein each pulse of the set of pulses has a pulse width of at least 0.01 milliseconds and less than the period of the first selected frequency.

Neural modulation devices and methods

An inductor layout and manufacturing method thereof are provided. The inductor layout includes a substrate and a conductive path. The substrate includes at least an active region, wherein the active region includes at least a circuit. The conductive path is disposed over the substrate and arranged near the edge of the active region along the direction of the edge of the active region. Wherein, two ends of the conductive path are the two ends of the inductor.

Inductor layout and manufacturing method thereof

Output phase noise for edge-combining delay-locked loops (DLLs) is derived in this study, which is obtained by decomposing the synthesized output waveform into a noise-free signal and a corresponding noise perturbation on it. The noise-free signal, which is affected by the systematic errors as the phase offset between phase detector inputs or delay mismatches among delay cells, possesses a periodic steady-state solution, and therefore leads to output spur. The noise perturbation, on the other hand, will be upconverted to the frequency-multiplied output based on this solution. A general analysis approach is provided that can be applied to the case such as the change of the frequency multiplication factor or the variation of the output duty cycle. The theory is verified by a programmable edge-combining DLL, which has been realized in a CMOS 90-nm technology. The predicted output phase noise has close agreement with simulation results, as well as the measurement data when the frequency multiplication factor changes.

A Waveform-Dependent Phase-Noise Analysis for Edge-Combining DLL Frequency Multipliers

The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FETs was studied. In the experiment, Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FETs (DCFET's) using triple-recessed gate structure were compared with devices using single-recessed and double-recessed gate structures. It is found that triple-recessed gate approach provides higher breakdown voltage (35 V) than single-recessed (16 V) and double-recessed gate (28 V) approaches. This is attributed to the larger aspect ratio in the triple-recessed gate structure. A unified method to calculate the breakdown voltages of MESFETs, HEMTs and DCFETs (or MISFETs) of any given arbitrary recessed gate profile was proposed and used to explain the experimental results.

The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's

A 94 GHz CMOS down-conversion mixer is reported. RF negative resistance compensation (NRC) technique, i.e., PMOS LC-oscillator-based RF transconductance (GM) stage load, is used to increase the output impedance and suppress the feedback capacitance ${C}_{\mathrm{gd}}$ of RF GM stage. As a result, conversion gain (CG), noise figure (NF) and LO-RF isolation of the mixer are enhanced. For frequencies of 80∼110 GHz, the mixer consumes 6.3 mW and achieves excellent RF-port input reflection coefficient $({S}_{11})$ of $-8.7\!\sim\!-22\;\text{dB}$ and LO-port input reflection coefficient $({S}_{22})$ of $-10.3\!\sim\!-19.4\;\text{dB}$ . In addition, the mixer achieves excellent CG of 4.1∼11.6 dB, NF of 15.8∼18.1 dB, and LO-RF isolation of 42.1∼54 dB for frequencies of 80∼110 GHz, one of the best CG, NF and LO-RF isolation results ever reported for a W-band CMOS down-conversion mixer.

6.3 mW 94 GHz CMOS Down-Conversion Mixer With 11.6 dB Gain and 54 dB LO-RF Isolation

A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with 11 dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB=−17 dBm and IIP3=−7 dBm are achieved for a small local oscillator power of −2 dBm when LO=5.35 GHz and RF=5.7 GHz.

/pdf/dc-to-8-ghz-11-db-gain-gilbert-micromixer-using-gainp-gaas-3ljdejssk9.pdf

Shey-Shi Lu

Papers

Inductor layout and manufacturing method thereof

A Waveform-Dependent Phase-Noise Analysis for Edge-Combining DLL Frequency Multipliers

The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's

6.3 mW 94 GHz CMOS Down-Conversion Mixer With 11.6 dB Gain and 54 dB LO-RF Isolation

DC to 8 GHz 11 dB Gain Gilbert Micromixer Using GaInP/GaAs HBT Technology