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Design Of Analog Cmos Integrated Circuits

This tutorial presents an overview of the technological advances in millimeter-wave (mm-wave) circuit components, antennas, and propagation that will soon allow 60-GHz transceivers to provide multigigabit per second (multi-Gb/s) wireless communication data transfers in the consumer marketplace. Our goal is to help engineers understand the convergence of communications, circuits, and antennas, as the emerging world of subterahertz and terahertz wireless communications will require understanding at the intersections of these areas. This paper covers trends and recent accomplishments in a wide range of circuits and systems topics that must be understood to create massively broadband wireless communication systems of the future. In this paper, we present some evolving applications of massively broadband wireless communications, and use tables and graphs to show research progress from the literature on various radio system components, including on-chip and in-package antennas, radio-frequency (RF) power amplifiers (PAs), low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), mixers, and analog-to-digital converters (ADCs). We focus primarily on silicon-based technologies, as these provide the best means of implementing very low-cost, highly integrated 60-GHz mm-wave circuits. In addition, the paper illuminates characterization techniques that are required to competently design and fabricate mm-wave devices in silicon, and illustrates effects of the 60-GHz RF propagation channel for both in-building and outdoor use. The paper concludes with an overview of the standardization and commercialization efforts for 60-GHz multi-Gb/s devices, and presents a novel way to compare the data rate versus power efficiency for future broadband devices.

http://faculty.poly.edu/~tsr/wp-content/uploads/publications/abstract17.pdf

State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications

A strain sensor has been fabricated from a polymer nanocomposite with multiwalled carbon nanotube (MWNT) fillers. The piezoresistivity
of this nanocomposite strain sensor has been investigated based on an improved three-dimensional (3D) statistical resistor network
model incorporating the tunneling effect between the neighboring carbon nanotubes (CNTs), and a fiber reorientation model. The
numerical results agree very well with the experimental measurements. As compared with traditional strain gauges, much higher sensitivity
can be obtained in the nanocomposite sensors when the volume fraction of CNT is close to the percolation threshold. For a small
CNT volume fraction, weak nonlinear piezoresistivity is observed both experimentally and from numerical simulation. The tunneling
effect is considered to be the principal mechanism of the sensor under small strains.

Tunneling effect in a polymer/carbon nanotube nanocompositestrain sensor

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

A system for designing a therapy or for treating a gastrointestinal disorder or a condition associated with excess weight in a subject comprising at least one electrode configured to be implanted within a body of the patient and placed at a vagus nerve, the electrode also configured to apply therapy to the vagus nerve upon application of a therapy cycle to the electrode; an implantable neuroregulator for placement in the body of the patient beneath the skin layer, the implantable neuroregulator being configured to generate a therapy cycle, wherein the therapy cycle comprises an on time during which an electrical signal is delivered, the electrical signal comprising: a) a set of pulses applied at a first selected frequency of about 150-10,000 Hz, wherein each pulse of the set of pulses has a pulse width of at least 0.01 milliseconds and less than the period of the first selected frequency.

Neural modulation devices and methods

A highly-integrated DNA detection SoC, which includes DNA sensors, readout circuit, MCU, and OOK TX/RX, is implemented in a 0.35µm CMOS Bio-MEMS process. For low DNA concentration, an oscillator-based self-calibrated readout circuit with high sensitivity (2kHz/Ω) is proposed to convert small resistance variation of the piezoresistive cantilever sensor into adequate frequency shift. The measured results reveal that it could detect &#60;0.02% of resistance variation (0.6Ω) and cover detection concentration range of specific DNA from 100pM to 1µM.

http://ieeexplore.ieee.org/iel5/5976946/5985982/05986419.pdf

A fully-integrated cantilever-based DNA detection SoC in a CMOS Bio-MEMS process

This study is aimed at making metallic fine lines characterized with high aspect ratio. There are two methods we have developed. One is the trilevel lift-off method with submicron lithography, and the other is the lift-off method by using the commercial negative photoresist SU-8 made by IBM. First, the trilevel lift-off method is described. A pre- imidized, soluble polyimide layer of OCG Probimide 293 A is spun on a wafer with thickness 4 micrometer. A 120 nm thick layer of silicon oxynitride was formed on the polyimide by PECVD. A layer photoresist layer was applied and patterned. This photoresist layer is used as the etching mask of silicon oxynitride by RIE with the gas CF4 plasma. Similarly, the silicon oxynitride is used as the etching mask of the thick polyimide layers by RIE with the gas O2 plasma. After metallization the pre-imidized polyimide is dissolved in methylene chloride lifting off the oxynitride and metal layers. Following this way, the submicron lithography, such as silylation technology, is suitable to make the aspect ratio up to 10 and the metal line will still have 3 micrometer height. The other is the lift-off method by using negative photoresist SU-8. This SU-8 is originally used as high aspect ratio molding. The linewidth of SU-8 is reduced to 2 micrometer linewidth with 12 micrometer height, and used as the remover to lift off after metallization. This SU-8 makes the fine-line metallization of 2 micrometer linewidth to achieve the aspect- ratio up to 5.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

High-aspect-ratio fine-line metallization

A process for the formation of submicron V-gates by V-grooves was demonstrated for the first time. The fabrication steps of V-gates consist of anisotropic wet etching of the undoped GaAs layer grown on top of a GaInP layer and subsequent metal evaporation and lift-off process. Owing to the outward slope of the sidewalls of the micromachined V-groove, submicron gate length could be easily obtained by normal 1 /spl mu/m UV photolithography. The submicron V-gate process was also applied successfully to the fabrication of V-gate GaInP/GaAs/InGaAs metal semiconductor field effect transistors with a gate length of 0.6 /spl mu/m.

A process for the formation of submicron V-gate by micromachined V-grooves using GaInP/GaAs selective etching technique

A wideband LNA (2.4-6 GHz) is realised in 0.18 um CMOS technology by adopting a unique LC load-reusing technique. The LC load at the output is transformed into a series LC circuit at the input, leading to an extension of the matching bandwidth (4.8 GHz). The NF shows an extremely flat frequency response within 0.2 dB difference around 2.7 dB over the band of interest. A linearisation technique is also utilised to improve the input third-order intercept point (IIP 3 ) ranging from -1.9 to -3.9 dBm.

Wideband low-noise amplifier by LC load-reusing technique

This invention is primarily a circuit structure of self-mixing receiver, and the methodology of circuit structure is described as follows. The first stage is a high input impedance voltage amplifier utilized to amplify the received RF carrier signal from the antenna. Besides, there are no any inductors required. The second stage is a multi-stage amplifier to amplify the output signal of first stage to rail-to-rail level, which is quite the same with supply voltage. The third stage is a mixer adopted to lower the signal frequency. The fourth stage is a digital output converter, which is proposed to demodulate the electric signals and convert the demodulated signal to digital signal.

Shey-Shi Lu

Papers

A fully-integrated cantilever-based DNA detection SoC in a CMOS Bio-MEMS process

High-aspect-ratio fine-line metallization

A process for the formation of submicron V-gate by micromachined V-grooves using GaInP/GaAs selective etching technique

Wideband low-noise amplifier by LC load-reusing technique

Self-mixing Receiver and Forming Method Thereof