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Shinichi Tanaka

Researcher at Shibaura Institute of Technology

Publications -  72
Citations -  795

Shinichi Tanaka is an academic researcher from Shibaura Institute of Technology. The author has contributed to research in topics: Heterojunction bipolar transistor & Amplifier. The author has an hindex of 15, co-authored 72 publications receiving 758 citations. Previous affiliations of Shinichi Tanaka include NEC & Purdue University.

Papers
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Proceedings Article

120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

Abstract: InP HBT ICs capable of 120-Gb/s multiplexing and 110-Gb/s demultiplexing operation have been developed. They feature a direct-drive series-gating configuration selector, an asymmetrical latch flip-flop, and broadband impedance matching with inverted microstrip lines. Their input sensitivity is less than 100 mV PP , and the output swing is more than 400 mV PP . To the best of our knowledge, this result is the highest data rate operation reported for electronic ICs. Moreover, error-free multiplexing and demultiplexing operation at 100 Gb/s was demonstrated.
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120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

TL;DR: An error-free multiplexing and demultiplexing operation at 100 Gb/s was demonstrated, and this result is the highest data rate operation reported for electronic ICs.
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Composition of green turtle feeding aggregations along the Japanese archipelago: implications for changes in composition with current flow

TL;DR: The genetic compositions of consecutive Japanese feeding aggregations of green turtles along the Kuroshio Current were examined by mixed-stock analyses of mitochondrial DNA control-region sequences and the significant correlation between genetic differentiation and geographical distance matrices indicated that most hatchlings from these regions transported by the KuroShio Current settle in upstream feeding grounds along the Japanese archipelago.
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A compact HBT device model based on a one-flux treatment of carrier transport

TL;DR: In this paper, a new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced, using McKelvey's flux method to treat carrier transport.
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Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

TL;DR: In this paper, the first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs was reported, and the 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAsHBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.