S
Sitaram Dash
Researcher at Indira Gandhi Centre for Atomic Research
Publications - 166
Citations - 3685
Sitaram Dash is an academic researcher from Indira Gandhi Centre for Atomic Research. The author has contributed to research in topics: Thin film & Nanocrystalline material. The author has an hindex of 34, co-authored 164 publications receiving 3161 citations. Previous affiliations of Sitaram Dash include VIT University.
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Ultra-low friction of TiC/a-C composite coatings
TL;DR: In this article, a tribological test on TiC/a-C composite coating synthesized by gas-solid interaction of Ti metal with CH4 gas in a thermogravimetric analyzer was conducted.
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Effect of adhesive and cohesive strength on the tribological behaviour of non‐reactively sputtered TiC thin films
TL;DR: Titanium carbide (TiC) thin films were deposited on D9 steel substrates at room temperature (RT), 200°C and 400°C as discussed by the authors, and as-deposited films were characterised for structural, chemical and mechanical properties.
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Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties
R. Krishnan,Christopher David,P. K. Ajikumar,R. Nithya,S. Tripura Sundari,Sitaram Dash,B. K. Panigrahi,Mohammed Kamruddin,A.K. Tyagi,Vikram Jayaram,Baldev Raj +10 more
TL;DR: In this article, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa.
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Evaluation of Tribological Properties of Nuclear-Grade Steel
TL;DR: In this paper, the evolution of friction and wear of nuclear-grade P91 steel was studied at constant load and sliding velocity, and the changes in wear damage and wear scar morphology resulting from sliding of a spherical steel ball.
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Growth kinetics of ion beam sputtered Al-thin films by dynamic scaling theory
TL;DR: In this article, the growth kinetics of ion beam sputtered aluminum thin films were derived from atomic force microscopy (AFM) measurements and the growth governing static and dynamic scaling exponents has been determined.