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Snigdha Bhattacharjee
Researcher at National Institute of Technology, Silchar
Publications - 14
Citations - 347
Snigdha Bhattacharjee is an academic researcher from National Institute of Technology, Silchar. The author has contributed to research in topics: Resistive random-access memory & Thin film. The author has an hindex of 9, co-authored 14 publications receiving 225 citations.
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Incorporation of SnO2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device
TL;DR: In this article, the electrical bistable characteristics of a hybrid polymer/inorganic nanocomposite device consisting of SnO2 nanoparticles (NPs) embedded in an insulating polymethylmethacrylate (PMMA) layer sandwiched between conductive indium tin oxide (ITO) and aluminium (Al) electrodes were reported.
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Multilevel programming in Cu/NiO y /NiO x /Pt unipolar resistive switching devices.
TL;DR: It was found that nonvolatile and stable resistance levels, especially the multiple low-resistance states of Cu/NiO y /NiO x /Pt memory devices, could be controlled by varying the compliance current.
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Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3-xClx Perovskite for RRAM Application.
Ujjal Das,D. Das,Bappi Paul,Tridip Rabha,Soumya Sundar Pattanayak,Aloke Kanjilal,Snigdha Bhattacharjee,Pranab Kumar Sarkar,Asim Roy +8 more
TL;DR: The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl doped films demonstrates resistive switching behavior, and the device with 20% chloride substituted film exhibits higher on/off ratio, extended endurance, long retention and high density storage ability.
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Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device
TL;DR: In this paper, the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals were investigated on an ITO-coated PET substrate with copper as the top electrode.
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Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application
TL;DR: In this paper, a bipolar resistive switching (RS) behavior was observed in CVD grown tungsten disulfide (WS2) thin film memory device fabricated on Pt/Ti/SiO2/Si substrate with top Al contacts.