Journal ArticleDOI
Multilevel programming in Cu/NiO y /NiO x /Pt unipolar resistive switching devices.
TLDR
It was found that nonvolatile and stable resistance levels, especially the multiple low-resistance states of Cu/NiO y /NiO x /Pt memory devices, could be controlled by varying the compliance current.Abstract:
The application of a NiO y /NiO x bilayer in resistive switching (RS) devices with x > y was studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change in resistance brought about by sweeping the voltage, along with an improved on/off ratio (>103) and endurance (104) were achieved in the bilayer structure as compared to the single NiO x layer devices. Moreover, it was found that nonvolatile and stable resistance levels, especially the multiple low-resistance states of Cu/NiO y /NiO x /Pt memory devices, could be controlled by varying the compliance current. All the multilevel resistance states of the Cu/NiO y /NiO x /Pt bilayer devices were stable for up to 500 consecutive dc switching cycles, as compared to the Cu/NiO x /Pt single layer devices. The temperature-dependent variation of the high and low resistance states of both the bilayer and single layer devices was further investigated to elucidate the charge conduction mechanism. Finally, based on a detailed analysis of the experimental results, comparisons of the possible models for RS in bilayer and single layer memory devices have also been discussed.read more
Citations
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Journal ArticleDOI
Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory
TL;DR: In this paper, reversible alternation between bipolar and unipolar resistive switching (RS) modes was observed by controlling voltage-polarity in Ag/MoS2/Au memory on polyethylene terephthalate (PET) substrate.
Journal ArticleDOI
Compliance Current-Dependent Dual-Functional Bipolar and Threshold Resistive Switching in All-Inorganic Rubidium Lead-Bromide Perovskite-Based Flexible Device
TL;DR: In this paper, the inorganic halide perovskites are considered as favorable materials for various electronic applications because of their superior functionality and stability, and they are used for various applications.
Journal ArticleDOI
Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
Abubakkar Siddik,Prabir Kumar Haldar,Tufan Paul,Ujjal Das,A. Barman,Asim Roy,Pranab Kumar Sarkar +6 more
TL;DR: The environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors for the development of next-generation flexible electronics.
Journal ArticleDOI
Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption
Journal ArticleDOI
Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3-xClx Perovskite for RRAM Application.
Ujjal Das,D. Das,Bappi Paul,Tridip Rabha,Soumya Sundar Pattanayak,Aloke Kanjilal,Snigdha Bhattacharjee,Pranab Kumar Sarkar,Asim Roy +8 more
TL;DR: The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl doped films demonstrates resistive switching behavior, and the device with 20% chloride substituted film exhibits higher on/off ratio, extended endurance, long retention and high density storage ability.
References
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Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Electrode dependence of filament formation in HfO2 resistive-switching memory
TL;DR: In this paper, the authors investigated bipolar and non-polar resistive-switching of HfO2 with various metal electrodes and found that the composition of conducting filaments strongly depends upon the metal electrodes.