Soline Boyer-Richard

TL;DR: It is shown through high-resolution in situ synchrotron XRD measurements that CsPbI3 can be undercooled below its transition temperature and temporarily maintained in its perovskite structure down to room temperature, stabilizing a metastable perovkite polytype (black γ-phase) crucial for photovoltaic applications.

TL;DR: In this paper, the authors demonstrate that the voltage and current can be enhanced in a semiconductor heterostructure due to the presence of the hot carrier population in a single InGaAsP quantum well at room temperature.

TL;DR: In this paper, an empirical tight-binding (TB) model for the reference Pm-3m perovskite cubic phase of halide perovsites of general formula ABX3 is presented.

TL;DR: The TB electronic band diagram, with and without spin orbit coupling effect of MAPbI3 has been determined based on state of the art density functional theory results including many body corrections (DFT+GW), which affords access to various properties, including distorted structures, at a significantly reduced computational cost.

Abstract: This letter deals with the electroluminescence emission at room temperature of two light-emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary GaAsPN/GaPN multiple quantum wells. In agreement with tight-binding calculations, an indirect band gap is demonstrated from the temperature-dependent photoluminescence for the first structure. High efficiency photoluminescence is then observed for the second structure. Strong electroluminescence and photocurrent are measured from the diode structures at room temperature at wavelengths of 660 nm (GaAsP/GaP) and 730 nm (GaAsPN/GaPN). The role of the incorporation of nitrogen on the optical band gap and on the nature of interband transitions is discussed.