Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector–emitter voltage $(V_{{\rm{CE\_ON}}})$ and forward voltage $(V_{F})$ measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.

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Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.

A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices

This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage $V_{{\rm CE}\_{\rm ON}}$ and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.

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Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules

Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state collector–emitter voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.

Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules

Power electronics are facing continuous pressure to be cheaper and smaller, have a higher power density, and, in some cases, also operate at higher temperatures. At the same time, power electronics products are expected to have reduced failures because it is essential for reducing the cost of energy. New approaches for reliability assessment are being taken in the design phase of power electronics systems based on the physics-of-failure in components. In this approach, many new methods, such as multidisciplinary simulation tools, strength testing of components, translation of mission profiles, and statistical analysis, are involved to enable better prediction and design of reliability for products. This article gives an overview of the new design flow in the reliability engineering of power electronics from the system-level point of view and discusses some of the emerging needs for the technology in this field.

New Approaches to Reliability Assessment: Using physics-of-failure for prediction and design in power electronics systems

In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different conditions by an advanced power cycling test setup, which allows tested modules to be operated under more realistic electrical conditions during the power cycling test. The analysis of the test results and the temperature swing duration dependent lifetime factor under different definitions and confidence levels are presented. This study enables to include the t △ Tj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also performed.

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Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated. This paper presents a fast-switching integrated power module based on gallium nitride enhancement-mode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures. The structure of the proposed power module is presented, and the design of its gate driver circuit and board layout structure is discussed. The thermal characteristics of the designed power module are evaluated using COMSOL Multiphysics. An ANSYS Q3D Extractor is used to extract the parasitics of the designed power module, and is included in simulation models of various complexities. The simulation model includes the SPICE model of the gallium nitride devices, and parasitics of components are included by experimentally characterizing them up to 2 GHz. Finally, the designed power module is tested experimentally, and its switching characteristics cohere with the results of the simulation model. The experimental results show a maximum achieved switching transient of 64 V/ns and verify the power loop inductance of 2.65 nH.

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Soren Jorgensen

Papers

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules

Reliability Improvement of Power Converters by Means of Condition Monitoring of IGBT Modules

Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices