Stefano Bonaldo

TL;DR: The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent as mentioned in this paper, and the threshold voltage often shifts significantly during irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, and irradiation/annealing temperature.

TL;DR: In this article, the authors reported the clear evidence of a dose-rate sensitivity of the TID-induced damage in both 130 and 65-nm CMOS technologies exposed to different radiation sources (X-rays and $\gamma $ -rays from a 60Co source).

TL;DR: In this article, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed, and the results are finally compared and discussed through technology computer-aided design simulations.

TL;DR: In this article, the authors investigated total ionizing dose (TID) mechanisms in 28-nm MOSFETs via dc static and low-frequency noise measurements and found that TID sensitivity depends on the channel length, the channel width, and the bias condition.

TL;DR: In this article, total ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO2/Al2O3 gate-stack.