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Federico Faccio

Researcher at CERN

Publications -  121
Citations -  4230

Federico Faccio is an academic researcher from CERN. The author has contributed to research in topics: CMOS & Buck converter. The author has an hindex of 29, co-authored 117 publications receiving 3641 citations.

Papers
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Description and performance of track and primary-vertex reconstruction with the CMS tracker

S. Chatrchyan, +2387 more
TL;DR: In this paper, a description of the software algorithms developed for the CMS tracker both for reconstructing charged-particle trajectories in proton-proton interactions and for using the resulting tracks to estimate the positions of the LHC luminous region and individual primary-interaction vertices is provided.
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Radiation-induced edge effects in deep submicron CMOS transistors

TL;DR: In this article, the authors studied the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology and demonstrated that the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift.
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Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects

TL;DR: In this paper, the authors discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to improve radiation tolerance of ASIC's designed for the LHC experiments.
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Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

TL;DR: In this paper, the behavior of transistors in commercial-grade complementary metaloxide semiconductor technologies in the 65 and 130 nm nodes has been explored up to a total ionizing dose of 1 Grad.