Steven Brems

TL;DR: In this article, the authors theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electroabsorption modulator capable of broadband 10 Gb/s modulation speed.

TL;DR: High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence, and shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.

TL;DR: High-resolution measurements of the anisotropic magnetoresistance (AMR) and magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in-plane external field perpendicular to the cooling field.

TL;DR: Applying an in-plane magnetic field perpendicular to the cooling field largely restores the untrained state with its pronounced asymmetry, providing the key to identify the physical origin of training and removal of the asymmetry.

TL;DR: A ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS 2 nanoribbons on β-gallium ( iii ) oxide (β-Ga 2 O 3 ) (100) substrates is demonstrated, which provides an epitaxy platform for advanced electronics applications of TMD nan oribbons.