S
Sumit Agarwal
Researcher at Colorado School of Mines
Publications - 111
Citations - 2226
Sumit Agarwal is an academic researcher from Colorado School of Mines. The author has contributed to research in topics: Silicon & Atomic layer deposition. The author has an hindex of 25, co-authored 90 publications receiving 1868 citations. Previous affiliations of Sumit Agarwal include University of Massachusetts Amherst & National Renewable Energy Laboratory.
Papers
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Journal ArticleDOI
Surface reactions of aminosilane precursors during N2 plasma‐assisted atomic layer deposition of SiNx
TL;DR: In this paper, the surface reactions during atomic layer deposition (ALD) of SiNx were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy, and the infrared spectra recorded during each ALD half-cycle provided unambiguous experimental evidence that surface secondary amines (>NH) are the primary reactive sites for chemisorption of DSBAS and bis(diethylamino) silane (BDEAS).
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Investigation on the NO formation of ammonia oxidation in a shock tube applying tunable diode laser absorption spectroscopy
TL;DR: In this article , the authors used tunable diode laser absorption spectroscopy (TDLAS) to perform time-resolved nitric oxide (NO) measurements of NH3/O2/Ar mixtures.
Journal ArticleDOI
Functionalization of the SiO<sub>2</sub> Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>
Sumit Agarwal,Isabel Wollaston +1 more
TL;DR: In this paper , a SiO2 surface was prefunctionalized with bis(dimethylamino)dimethylsilane (BDMADMS) and DMATMS through solution and the vapor phase.
Proceedings ArticleDOI
Study of nickel silicide as a copper diffusion barrier in monocrystalline silicon solar cells
Abhijit S. Kale,Emily Beese,Theresa E. Saenz,Emily L. Warren,William Nemeth,David L. Young,Alexander Marshall,Karine Florent,Santosh K. Kurinec,Sumit Agarwal,Pauls Stradins +10 more
TL;DR: In this paper, the authors compared the quality of NiSi films formed using e-beam Ni and electroless Ni process and showed that NiSi film formed using the single step annealing process is as good as the two step process using XRD and Raman.
Journal ArticleDOI
Measurement of poly-Si film thickness on textured surfaces by X-ray diffraction in poly-Si/SiO passivating contacts for monocrystalline Si solar cells
Kejun Chen,Alexandra M. Bothwell,Harvey Guthrey,Matthew B. Hartenstein,Jana-Isabelle Polzin,Frank Feldmann,William Nemeth,San Theingi,Matthew Page,David M. Young,Paul Stradins,Sumit Agarwal +11 more
TL;DR: In this article , the front poly-Si layer was thinned from 200 to 60 nm by using the front metal grids as a self-aligned mask, and the thickness calculated from the diffraction peak height of the Si(111) crystallographic plane was calculated.