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Sung-Jin Choi

Researcher at Kookmin University

Publications -  238
Citations -  5814

Sung-Jin Choi is an academic researcher from Kookmin University. The author has contributed to research in topics: Field-effect transistor & Transistor. The author has an hindex of 34, co-authored 220 publications receiving 4652 citations. Previous affiliations of Sung-Jin Choi include Inha University & KAIST.

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A polydimethylsiloxane (PDMS) sponge for the selective absorption of oil from water.

TL;DR: Through appropriately combining various sugar particles, the absorption capacity of the PDMS sponge is favorably optimized, enabling excellent recyclability and promoting potential in environmental applications.
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Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

TL;DR: In this article, the sensitivity of threshold voltage (T) to the variation of silicon nanowire (SiNW) width (Wsi) in gate-all-around junctionless transistors by comparison with inversion-mode transistors with the same geometric parameters was investigated.
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Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol

TL;DR: A synaptic transistor based on highly purified, preseparated 99% semiconducting carbon nanotubes is demonstrated, which can provide adjustable weight update linearity and variation margin and can enhance the fault tolerance of the recognition system, which improves the recognition accuracy.
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Double-Gate Nanowire Field Effect Transistor for a Biosensor

TL;DR: In this article, a double-gate nanowire field effect transistor (FET) straddled by a double gate was demonstrated for biosensor application. And the detection sensitivity was enhanced by applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only.
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Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors

TL;DR: In this article, a bulk current model for long-channel double-gate junctionless (DGJL) transistors was formulated using a depletion approximation, and an analytical expression was derived from the Poisson equation to find channel potential.